EiceDRIVER™ガルバニック絶縁Enhancedシリーズ

概要

These galvanically isolated drivers provide driving capabilities of up to 9 A making booster solutions obsolete. The EiceDRIVER™ Enhanced isolated gate drivers are ideal for applications using traditional switches, such as IGBTs or  MOSFETs, but also for leading-edge technologies such as Silicon Carbide (SiC) MOSFETor IGBT7.

In particular the Miller Clamp option and the accurate short-circuit protection feature (DESAT) enables superior application safety by avoiding parasitic turn-on and short-circuit occurrence, respectively, especially when driving CoolSiC™ SiC MOSFET and TRENCHSTOP™ IGBT7.

 

製品
ハイライト

The EiceDRIVER™ Enhanced galvanically isolated drivers are based on our coreless transformer (CT) technology, enabling a world class common mode transient immunity (CMTI) of 200 kV/μs. They are ideal for applications such as solar string inverters, EV charging, UPS, industrial drives, CAC, welding equipment, induction heating appliances, and power supplies for servers and telecommunication systems.

EiceDRIVER™ Enhanced isolated driver family is a perfect fit for all applications requiring a reliable DESAT protection, benefit from an active Miller clamp and small PCB space requirements.

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ビデオ

An Introduction to Infineon Gate Drivers

7:03

Do you want to know more about Infineon´s gate drivers? Watch our introduction video and become familiar with our product portfolio.

Galvanic isolated Gate Drivers with Protection Features

1:41

EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer short circuit protection, 100 kV/μs CMTI, active Miller clamp, soft turn off and other features, especially for driving SiC MOSFETs and GaN HEMTs.

トレーニング
How to choose gate driver for IGBT discretes and modules

With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

  • EiceDRIVER™ Enhanced now include 1ED34XX (X3 Analog), with DESAT(adjustable filter time), soft-off(adjustable current)
  • Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
  • Perfect for CoolSiC™ SiC MOSFET. VDE 0884-11 & UL 1577 (planned). For solar, EV charging, industrial drive, UPS, etc.

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