Silicon carbide CoolSiC™ MOSFETs bare dies

CoolSiC™ MOSFET chip technology in different sizes and layouts

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概要

Infineon's CoolSiC™ MOSFET bare dies for automotive inverter applications enable designers to leverage efficiency and power density. They enhance system efficiency by operating at higher temperatures and switching frequencies. Available in 750 V and 1200 V, with corner- and mid-gate layouts, and chip sizes for 7-11 mΩ RDS, they offer superior gate-oxide reliability and low switching losses, thanks to a state-of-the-art trench design, and accommodate various connection methods with multiple metal stack options

主な機能

  • High efficiency and power density
  • Corner- & mid-gate layouts available
  • Various metal stack options
  • State-of-the-art trench design
  • Standard voltage levels: 750 & 1200 V
  • Chip sizes for 7-11 mΩ RDS(on)
  • Superior gate-oxide reliability

Products

About

Silicon Carbide CoolSiC™ MOSFET bare dies

Infineon’s range of CoolSiC™ MOSFET bare dies for automotive inverter applications allows designers to fully leverage the potential for efficiency and power density. When Silicon Carbide (SiC) semiconductors are used as switches, the overall system efficiency is enhanced by enabling higher operating temperatures and switching frequencies. Infineon's SiC bare dies are available in standard voltage levels of 750 V and 1200 V. Designers can choose from corner- and mid-gate layouts, with chip sizes for 7 mΩ to 11 mΩ RDS (on-resistance). Various metal stack options are provided to accommodate all connection methods.

SiC MOSFET bare dies offer superior gate-oxide reliability, thanks to a state-of-the-art trench design, delivering best-in-class switching and conduction losses.

Key benefits

Best performance:

  • CoolSiCTM Trench technology
  • Best in Class RDS(on) x Area
  • Higher efficiency
  • Up to 200°C operating temperature

Quality leadership:

  • Low CoolSiC™ FIT
  • Dedicated automotive development
  • Extended qualification
  • Low parameter spread for parallelization
  • Known Good Die testing implemented
Automotive inverter application

Infineon offers its CoolSiC™ MOSFET bare die range to the automotive industry for the application in hybrid and electric vehicles' traction inverter. The switches in traction inverters are used to convert the DC from the high voltage battery to AC for the electric motors.

Silicon Carbide CoolSiC™ MOSFET bare dies

Infineon’s range of CoolSiC™ MOSFET bare dies for automotive inverter applications allows designers to fully leverage the potential for efficiency and power density. When Silicon Carbide (SiC) semiconductors are used as switches, the overall system efficiency is enhanced by enabling higher operating temperatures and switching frequencies. Infineon's SiC bare dies are available in standard voltage levels of 750 V and 1200 V. Designers can choose from corner- and mid-gate layouts, with chip sizes for 7 mΩ to 11 mΩ RDS (on-resistance). Various metal stack options are provided to accommodate all connection methods.

SiC MOSFET bare dies offer superior gate-oxide reliability, thanks to a state-of-the-art trench design, delivering best-in-class switching and conduction losses.

Key benefits

Best performance:

  • CoolSiCTM Trench technology
  • Best in Class RDS(on) x Area
  • Higher efficiency
  • Up to 200°C operating temperature

Quality leadership:

  • Low CoolSiC™ FIT
  • Dedicated automotive development
  • Extended qualification
  • Low parameter spread for parallelization
  • Known Good Die testing implemented

Automotive inverter application

Infineon offers its CoolSiC™ MOSFET bare die range to the automotive industry for the application in hybrid and electric vehicles' traction inverter. The switches in traction inverters are used to convert the DC from the high voltage battery to AC for the electric motors.

Documents

Documents

Design resources

Developer community

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