Technology describes how a gate-driver IC transfers a signal or isolates circuitry internally. Topology describes the arrangement being driven, such as low-side, half-bridge, or three-phase. Isolation class describes the required electrical separation.

A half-bridge can be implemented with a level-shift device or with isolated channels, depending on the system architecture.

Technology determines how the command reaches the output stage, which electrical domains can be bridged, and how the IC behaves during fast transients. Technology is not topology: half-bridge describes a circuit arrangement, while SOI or JI describes an implementation. Isolated describes an architecture; Coreless Transformer technology is one way EiceDRIVER™ implements that function. 

Coreless Transformer technology transfers digital switching information magnetically across a galvanic isolation barrier. The input and output chips are electrically separated, and the output side uses a local isolated supply referenced to the power switch. 

Infineon EiceDRIVER™ isolated gate driver products feature 1- and 2-channel solutions, functional/basic/reinforced options depending on family and package, high CMTI, strong output stages, and enhanced protection/configurability in selected products. These characteristics are useful in industrial, automotive, EV charging, OBC, PV/ESS, UPS, and SST power stages where galvanic isolation is required.

Infineon’s CT technology based Gate Drivers offer:

  • Galvanic separation between control and power domains.

  • High common-mode transient immunity for fast-switching systems.

  • Functional, basic, or reinforced isolation choices depending on the selected family.

  • Protection options including DESAT, active Miller clamp, soft-off, TLTO, slew-rate control, and monitoring. 

  • Selected families with high output-current capability that can reduce the need for an external booster.

Next step: Explore Isolated Gate Drivers, Transformer driver ICs, Solid state isolators, Solid state relays

Review CT-based Isolated Compact, enhanced, single-channel and dual-channel Isolated Gate Driver families & Transformer drivers ICs for Isolated Gate Driver bias supplies & Solid state isolators and relays.

SOI places active devices in electrically isolated silicon regions. In Infineon’s EiceDRIVER™ level-shift products, it supports high-side, half-bridge, dual-floating, and multi-channel configurations without creating a galvanic safety barrier between input and output. EiceDRIVER™ level-shift products feature integrated PN-based bootstrap diodes in many SOI devices, negative switch-node transient robustness, latch-up immunity, and reduced level-shift loss. These characteristics are useful in motor drives, appliances, power supplies, and other bridge-based converters where galvanic isolation is not required.

Infineon’s SOI technology based Gate Drivers offer:

  • Monolithic integration of one to six channels depending on product family.
  • Level-shift operation across medium- and high-voltage classes.
  • Integrated bootstrap functions that can reduce external components and PCB area.
  • Strong negative VS transient capability within product-specific limits.
  • Lower level-shift losses than traditional implementations in key product families.

Next step: Explore SOI Gate Driver ICs

Explore SOI level-shift high-voltage Gate Driver ICs for IGBTs and MOSFETs.

JI uses semiconductor junction structures to isolate high-voltage and low-voltage circuitry inside monolithic High-Voltage Integrated Circuit (HVIC) products. Because JI is a level-shift technology rather than a galvanic barrier, negative switch-node transients and parasitic structures must remain within the device operating limits. It is a mature technology used in high-side, half-bridge, and three-phase drivers. It offers broad, established configurations and industry-standard pinouts. This latch-immune CMOS technology enables a rugged, monolithic construction; the advanced process allows monolithic high-voltage and low-voltage circuitry construction with the best price per performance for specific motor control and switch mode power applications.

Infineon’s JI technology based Gate Drivers offer:

  • Established high-voltage level-shift architecture.
  • Broad range of standard one- to six-channel configurations.
  • Optional bootstrap-FET or bootstrap-diode functions in selected products.
  • Suitable where galvanic isolation is not required.

Next step: Explore JI Gate Driver ICs

Explore JI level-shift high-voltage gate driver ICs for IGBTs and MOSFETs.

A non-isolated driver shares an electrical reference with its input logic and the switch source or emitter. It is well suited to ground-referenced low-side drive or systems where isolation is provided elsewhere. TDI variants respond to the difference between two input pins, improving tolerance to local reference movement within the specified common-mode range. Infineon’s non-isolated gate driver portfolio includes single- and dual-channel low-side drivers with multiple logic configurations, UVLO choices, packages, and output-current levels. These characteristics are useful in power supplies, home appliances, BLDC motor drive, industrial automation and other applications where galvanic isolation is not required.

Next step: Explore Low-side Gate Drivers

Compare non-isolated ground-referenced and TDI solutions.

  • If galvanic isolation is mandatory, evaluate CT isolated drivers and the isolated bias-supply architecture.
  • If no galvanic barrier is needed but the switch is floating, evaluate SOI or JI level-shift solutions.
  • If the switch is ground-referenced, evaluate N-ISO or TDI devices.
  • Then refine the choice using voltage class, channel count, source/sink current, delay, CMTI, UVLO, package, qualification, and required features.

Next step: Compare CT, SOI, JI, and N-ISO products

Apply Isolation type filter to find products from the correct technology.

Next step: Explore Transformer driver ICs

Review full-bridge transformer drivers for isolated gate-driver bias supplies.

Recommended documents

What are the main EiceDRIVER(TM) gate driver technologies? 

The portfolio is organized around Coreless Transformer isolated technology, Silicon-on-Insulator level-shift technology, Junction Isolation level-shift technology, and non-isolated ground-referenced technology. 

No. SOI electrically isolates active devices within the IC and supports high-voltage level shifting, but it does not create a galvanic safety barrier between the input and output domains. 

Both can implement monolithic high-voltage level shifting. SOI isolates active devices with an insulating layer, while JI uses semiconductor junctions. Their transient behavior, losses, integration options, ratings, and product positioning can differ by device. 

Choose an isolated Coreless Transformer driver when the system architecture, safety standard, working voltage, grounding scheme, noise environment, or transient environment requires galvanic separation. 

CMTI is immunity to fast common-mode voltage transients. It is a key parameter for isolated and level-shift drivers operating with fast switch-node edges. 

The input and output share an electrical reference; there is no galvanic barrier inside the driver. 

No. It means the input and output share a reference. The applicable supply and bus-voltage limits depend on the specific architecture and device. 

A truly differential input responds to the voltage difference between two input pins and can improve tolerance to ground bounce or local reference movement within its specified range. 

Yes. Both technologies are used in level-shift gate drivers that control floating high-side switches, typically with a bootstrap or another floating supply.