Gate driver ICs

Experience the difference with EiceDRIVER™ gate driver ICs for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs

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Every switch needs a driver – the right driver makes a difference

Gate driver ICs serve as the interface between control signals (digital or analog controllers) and power switches (IGBTs, MOSFETs, SiC MOSFETs, and GaN HEMTs). Compared to a discretely-implemented gate driver solution, an integrated gate driver IC reduces design complexity, development time, bill of materials (BOM), and board space while improving reliability.

Infineon’s comprehensive gate driver IC portfolio offers typical output current options ranging from 0.1 A up to 18 A. Our gate drivers’ integrate protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection, make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™ and CoolSiC™.

EiceDRIVER™ gate driver IC technologies

Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs range from simple, cost-effective solutions to full-featured, advanced ICs. The variety is made possible with our four technologies.

Coreless Transformer (CT) technology is a magnetically coupled, galvanically isolated technology that integrates an on-chip transformer. The transformer transfers switching information and signals between the input and output chips. These gate drivers are functional, basic, and reinforced isolated with UL and VDE certifications.

Level-shift Silicon-on-insulator (SOI) technology enables a rugged, high-voltage monolithic IC design. SOI provides low-ohmic, integrated bootstrap-diodes, protection against negative transient voltage spikes, and eliminates parasitic transistors that cause latch-up.

Level-shift Junction Isolation (JI) technology is industry-proven, standard MOS/CMOS process. Our high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable monolithic construction with the best price for performance.

Non-isolated (N-ISO) technology enables monolithic, ground-reference gate drivers up to 35 V.

EiceDRIVER™ gate driver IC features

EiceDRIVER™ gate drivers provide advanced features such as integrated bootstrap diode (BSD), overcurrent protection, shutdown, fault reporting, enable, input filter, OPAMP, DESAT, programmable deadtime, shoot-through protection, active Miller clamp, active shutdown, separate sink and source outputs, short-circuit clamping, soft shutdown, two-level turn-off, slew-rate control, galvanic isolation (functional, basic, and reinforced), and more.

EiceDRIVER™ gate driver IC applications

EiceDRIVER™ gate drivers offers a comprehensive portfolio with a variety of configurations, voltage classes, isolation levels, protection features, and package options.

Advanced features include integrated bootstrap diode (BSD), over current protection, shutdown, fault reporting, enable, input filter, OPAMP, DESAT, programmable deadtime, shoot through protection, active miller clamp, active shutdown, separate sink and source outputs, short circuit clamping, soft shutdown, two level turn off, galvanic isolation (functional, basic, and reinforced), and more.

Every switch needs a driver – the right driver makes a difference

Gate driver ICs serve as the interface between control signals (digital or analog controllers) and power switches (IGBTs, MOSFETs, SiC MOSFETs, and GaN HEMTs). Compared to a discretely-implemented gate driver solution, an integrated gate driver IC reduces design complexity, development time, bill of materials (BOM), and board space while improving reliability.

Infineon’s comprehensive gate driver IC portfolio offers typical output current options ranging from 0.1 A up to 18 A. Our gate drivers’ integrate protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection, make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™ and CoolSiC™.

EiceDRIVER™ gate driver IC technologies

Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs range from simple, cost-effective solutions to full-featured, advanced ICs. The variety is made possible with our four technologies.

Coreless Transformer (CT) technology is a magnetically coupled, galvanically isolated technology that integrates an on-chip transformer. The transformer transfers switching information and signals between the input and output chips. These gate drivers are functional, basic, and reinforced isolated with UL and VDE certifications.

Level-shift Silicon-on-insulator (SOI) technology enables a rugged, high-voltage monolithic IC design. SOI provides low-ohmic, integrated bootstrap-diodes, protection against negative transient voltage spikes, and eliminates parasitic transistors that cause latch-up.

Level-shift Junction Isolation (JI) technology is industry-proven, standard MOS/CMOS process. Our high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable monolithic construction with the best price for performance.

Non-isolated (N-ISO) technology enables monolithic, ground-reference gate drivers up to 35 V.

EiceDRIVER™ gate driver IC features

EiceDRIVER™ gate drivers provide advanced features such as integrated bootstrap diode (BSD), overcurrent protection, shutdown, fault reporting, enable, input filter, OPAMP, DESAT, programmable deadtime, shoot-through protection, active Miller clamp, active shutdown, separate sink and source outputs, short-circuit clamping, soft shutdown, two-level turn-off, slew-rate control, galvanic isolation (functional, basic, and reinforced), and more.

EiceDRIVER™ gate driver IC applications

EiceDRIVER™ gate drivers offers a comprehensive portfolio with a variety of configurations, voltage classes, isolation levels, protection features, and package options.

Advanced features include integrated bootstrap diode (BSD), over current protection, shutdown, fault reporting, enable, input filter, OPAMP, DESAT, programmable deadtime, shoot through protection, active miller clamp, active shutdown, separate sink and source outputs, short circuit clamping, soft shutdown, two level turn off, galvanic isolation (functional, basic, and reinforced), and more.

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