IAUCN08S5N068T
新規
Active and preferred
RoHS対応

IAUCN08S5N068T

新規
80 V, N-Ch, 6.9 mΩ max, Automotive MOSFET, top-side cooled SSO10T (5x7), OptiMOS™ 5

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IAUCN08S5N068T
IAUCN08S5N068T


製品仕様情報

  • Currently planned availability until at least
    2040
  • ID (@25°C) (最大)
    80 A
  • QG (typ @10V) (最大)
    25.4 nC
  • QG (typ @10V)
    33 nC
  • RDS (on) (@10V) (最大)
    6.9 mΩ
  • VDS
    80 V
  • VGS(th) 範囲
    2.2 V~3.8 V
  • VGS(th)
    3 V
  • パッケージ
    PG-LHDSO-10
  • 動作温度 範囲
    -55 °C~175 °C
  • 技術
    OptiMOS™5
  • 極性
    N
  • 認定
    Automotive

OPN
IAUCN08S5N068TATMA1
製品ステータス active and preferred
インフィニオン パッケージ
パッケージ名 N/A
梱包サイズ 2000
梱包形態 TAPE & REEL
MSL (湿度感受性レベル) 1
防湿梱包 NON DRY
鉛フリー No
ハロゲンフリー Yes
RoHS対応 Yes
組立国
MY
ウェハ製造国
DE
Infineon stock last updated:
個. 在庫あり

製品ステータス
Active
インフィニオン パッケージ
パッケージ名 -
梱包サイズ 2000
梱包形態 TAPE & REEL
MSL (湿度感受性レベル) 1
防湿梱包 NON DRY
鉛フリー
ハロゲンフリー
RoHS準拠
組立国
MY
ウェハ製造国
DE
IAUCN08S5N068T is an automotive MOSFET built with Infineon’sinnovative, top-side cooled SSO10T 5x7mm2 SMD package. The SSO10T package helps customers achieve big advancements in cooling and power density. This product also utilizes Infineon’s OptiMOS™ 5 80 V power semiconductor technology. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applications.

特長

  • Direct cooling path to ECU housing
  • Virtually no heat flows into PCB
  • Industry’s largest exposed pad area
  • Freedom to route traces under package
  • Can mount parts on back side of PCB
  • Fast switching times (turn on/off)
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Package is listed with JEDEC

利点

  • Enables excellent thermal management
  • Thermal impedance improved 20% to 50%
  • Thermal resistance improved 20% to 50%
  • Helps reduce ECU volume or PCB area
  • Helps reduce PCB cost (area, Cu, vias)
  • Reduces PCB and system design effort
  • Superior switching performance
  • Quality and robustness for automotive
  • Potential for second source supplier
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