Active and preferred
RoHS準拠

ISZ053N08NM6

OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3 x 3.3

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ISZ053N08NM6
ISZ053N08NM6

製品仕様情報

  • ID (@25°C) (最大)
    90 A
  • IDpuls (最大)
    360 A
  • Ptot (最大)
    100 W
  • QG (typ @10V)
    21 nC
  • RDS (on) (@10V) (最大)
    5.3 mΩ
  • VDS (最大)
    80 V
  • VGS(th) (範囲)
    2.4 V ~ 3.5 V
  • VGS(th)
    3 V
  • パッケージ
    PQFN 3.3 x 3.3 Fused Lead
  • 動作温度 (範囲)
    -55 °C ~ 175 °C
  • 極性
    N
OPN
ISZ053N08NM6ATMA1
製品ステータス active and preferred
インフィニオンパッケージ
パッケージ名 PQFN 3.3 x 3.3
包装サイズ 5000
包装形態 TAPE & REEL
水分レベル 1
モイスチャーパッキン NON DRY
鉛フリー No
ハロゲンフリー Yes
RoHS準拠 Yes
Infineon stock last updated:

製品ステータス
Active
インフィニオンパッケージ
パッケージ名 PQFN 3.3 x 3.3
包装サイズ 5000
包装形態 TAPE & REEL
水分レベル 1
モイスチャーパッキン NON DRY
鉛フリー
ハロゲンフリー
RoHS対応
OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering. Compared to the latest OptiMOS™ 5 technology, Infineon's leading thin wafer technology enables significant performance improvement, including >28% lower RDS(on) and ~40% improved FOMs in PQFN 3.3x3.3. The performance improvement enables easier thermal design and less paralleling, leading to higher system efficiency, higher power density and system cost reduction. Infineon’s OptiMOS™ 6 80 V family is ideal for high switching frequency applications such as telecom, server and solar, and thanks to the performance improvement OptiMOS™ 6 80 V can be used also in battery powered applications as well as in battery management systems (BMS).

特長

  • Benchmark performance
  • RDS(on) options for best cost/performance
  • Industry standard packages
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification

利点

  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Wide portfolio for flexible supply chain
  • False turn-on immunity
  • Improved power, SOA & avalanche current
  • Robust reliable performance

用途

ドキュメント

デザイン リソース

開発者コミュニティ

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