IRLMS6702PBF-1

-20V Single P-Channel IR MOSFET in a TSOP-6 (Micro 6) package
データシート

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IRLMS6702PBF-1
IRLMS6702PBF-1
データシート

Product details

  • ID (@25°C) max
    -2.4 A
  • Ptot (@ TA=25°C) max
    1.7 W
  • Qgd
    2.1 nC
  • QG (typ @4.5V)
    5.8 nC
  • RDS (on) (@4.5V) max
    200 mΩ
  • RthJA max
    75 K/W
  • Tj max
    150 °C
  • VDS max
    -20 V
  • VGS(th) min
    -0.7 V
  • VGS max
    12 V
  • Package
    TSOP-6
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Polarity
    P
  • Special Features
    Small Power
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

機能

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard surface mount package

利点

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • High performance in low frequency applications
  • Standard pinout allows for drop in replacement

用途

ドキュメント

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