IPTC015N10NM5

IPTC015N10NM5

OptiMOS™ 5 power MOSFET in TOLT for excellent thermal performance

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IPTC015N10NM5
IPTC015N10NM5


製品仕様情報

  • ID (@25°C) (最大)
    354 A
  • IDpuls (最大)
    1416 A
  • Ptot (最大)
    375 W
  • QG (typ @10V)
    166 nC
  • RDS (on) (@10V) (最大)
    1.5 mΩ
  • VDS (最大)
    100 V
  • VGS(th) 範囲
    2.2 V~3.8 V
  • VGS(th)
    3 V
  • パッケージ
    TOLT (HDSOP-16)
  • ピン数
    16 Pins
  • 予算価格€/ 1k
    3.25
  • 動作温度 範囲
    -55 °C~175 °C
  • 実装
    SMT
  • 極性
    N

OPN
製品ステータス
インフィニオン パッケージ
パッケージ名
梱包サイズ
梱包形態
MSL (湿度感受性レベル)
防湿梱包
鉛フリー
ハロゲンフリー
RoHS対応
This OptiMOS™ 5 MOSFET in TOLT (TO-Leaded top side-cooling) package, combines package innovation with OptiMOS™ 5 technology for best-in-class products in 100 V as well as high current rating for high power density designs. With top side-cooling the drain is exposed at the surface of the package and 95 percent of the heat dissipation can be promoted directly to the heatsink achieving better thermal performance compared to TOLL package.

特長

  • Low RDS(on)
  • High current rating >300 A
  • Top side cooling
  • Negative stand-off
  • Sn-free exposed pad

利点

  • Increased system efficiency enabling extended battery life time
  • High power density
  • Superior thermal performance
  • Saving in cooling system
  • Minimized thermal resistance to heatsink

アプリケーション

ドキュメント

設計リソース

開発者コミュニティ