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IPP65R041CFD7

The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies
EA.
在庫あり

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IPP65R041CFD7
IPP65R041CFD7
EA.

Product details

  • ID max
    50 A
  • ID (@25°C) max
    50 A
  • IDpuls max
    211 A
  • Ptot max
    227 W
  • QG
    102 nC
  • QG (typ @10V)
    102 nC
  • RDS (on) (@ Tj = 25°C)
    36 mΩ
  • VDS max
    650 V
  • VGS(th)
    4 V
  • パッケージ
    TO220
  • 予算価格€/ 1k
    3.37
  • 動作温度
    -55 °C to 150 °C
  • 実装
    THT
  • 極性
    N
  • 特別な機能
    Fast recovery diode
OPN
IPP65R041CFD7XKSA1
製品ステータス active
インフィニオンパッケージ
パッケージ名 TO220
包装サイズ 500
包装形態 TUBE
水分レベル NA
モイスチャーパッキン NON DRY
鉛フリー Yes
ハロゲンフリー Yes
RoHS準拠 Yes
Infineon stock last updated:
EA. 在庫あり

製品ステータス
Active
インフィニオンパッケージ
パッケージ名 TO220
包装サイズ 500
包装形態 TUBE
水分レベル NA
モイスチャーパッキン NON DRY
鉛フリー
ハロゲンフリー
RoHS対応
EA.
在庫あり
Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPP65R041CFD7 in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition.  As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

機能

  • Ultrafast body diode and very low Qrr
  • 650V breakdown voltage
  • Significantly reduced switching losses compared to competition
  • Lowest RDS(on) dependency over temperature

利点

  • Excellent hard-commutation ruggedness
  • Extra safety margin for designs with increased bus voltage
  • Enabling increased power density
  • Outstanding light-load efficiency in industrial SMPS applications
  • Improved full-load efficiency in industrial SMPS applications
  • Price competitiveness compared to alternative offerings in the market

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