IPA60R450E6

データシート

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IPA60R450E6
IPA60R450E6
データシート

製品仕様情報

  • ID (@25°C) max
    9.2 A
  • ID max
    9.2 A
  • IDpuls max
    26 A
  • Ptot max
    30 W
  • QG
    28 nC
  • QG (typ @10V)
    28 nC
  • RDS (on) max
    450 mΩ
  • RDS (on) (@10V) max
    450 mΩ
  • RthJA max
    80 K/W
  • RthJC max
    4.2 K/W
  • Rth
    4.2 K/W
  • VDS max
    600 V
  • VGS(th)
    2.5 V to 3.5 V
  • パッケージ
    TO-220 FullPAK
  • 動作温度 min
    -55 °C
  • 実装
    THT
  • 極性
    N
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.600V CoolMOS™ E6 is replacement for 600V CoolMOS™ C3650V CoolMOS™ E6 is replacement for 650V CoolMOS™ C3

機能

  • Easy control of switching behavior
  • Very high commutation ruggedness 
  • Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss)
  • Easy to use
  • Better light load efficiency compared to C3
  • Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
  • Better price performance in comparison to previous CoolMOS™ generations
  • More efficient, more compact, lighter and cooler

利点

  • Improved power density
  • Improved reliability
  • General purpose part can be used in both soft and hard switching topologies
  • Better light load effciency
  • Improved effciency in hard switching applications
  • Improved ease-of-use
  • Reduces possible ringing due to pcb layout and package parasitic effects

用途

ドキュメント

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