IPA029N06NM5S

IPA029N06NM5S

OptiMOS™ 5 power MOSFET 60V in TO-220 FullPAK package (IPA029N06NM5S)

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IPA029N06NM5S
IPA029N06NM5S


製品仕様情報

  • ID (@ TC=25°C) (最大)
    87 A
  • ID (@25°C) (最大)
    87 A
  • IDpuls (最大)
    348 A
  • Ptot (最大)
    38 W
  • QG (typ @10V)
    56 nC
  • RDS (on) (@10V) (最大)
    2.9 mΩ
  • VDS (最大)
    60 V
  • VGS(th) 範囲
    2.1 V~3.3 V
  • VGS(th)
    2.8 V
  • パッケージ
    TO-220 FullPAK
  • 動作温度 範囲
    -55 °C~175 °C
  • 極性
    N

OPN
製品ステータス
インフィニオン パッケージ
パッケージ名
梱包サイズ
梱包形態
MSL (湿度感受性レベル)
防湿梱包
鉛フリー
ハロゲンフリー
RoHS対応
The OptiMOS™ 5 power MOSFET 60V in TO-220 FullPAK package (IPA029N06NM5S) features increased power density, improved efficiency with low RDS(on) of 2.9mOhm and lower system costs. The TO-220 FullPAK package portfolio of Infineon’s power MOSFETs presents a perfect solution for synchronous rectification. These products are optimized for applications such as TV power supply, adapter, desktop and gaming.

特長

  • Low voltage overshoot
  • Low on-state resistance (RDS(on))
  • No need for electrical isolation material which is normally used in TO-220 packages

利点

  • Less paralleling required
  • Generated heat is not diverted to the printed circuit board
  • Less heat generation
  • Fits TO-220 footprint

アプリケーション

ドキュメント

設計リソース

開発者コミュニティ