CSF04ISCH90LT1
新規
Active and preferred
RoHS対応

CSF04ISCH90LT1

新規
CSF04ISCH90LT1 is 40V MOSFET with integrated current sensing that delivers higher efficiency and enhanced thermal performance in motor drive systems.

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

CSF04ISCH90LT1
CSF04ISCH90LT1


製品仕様情報

  • Ciss
    5506 pF
  • Coss
    1779 pF
  • ID (@25°C) (最大)
    287 A
  • Ptot
    125 W
  • Qgd
    11 nC
  • QG (typ @10V)
    79 nC
  • RDS (on) (@10V)
    0.9 mΩ
  • RthJA
    50 °C/W
  • Special Features
    Current Sensing, OCP, OTP, UVLO
  • VDS (最大)
    40 V
  • VGS(th) (typ)
    2.3 V
  • VGS
    12 V
  • パッケージ
    PG-TISON-9-1
  • ピン数
    9
  • モイスチャー感度レベル
    MSL2
  • 動作温度 範囲
    -40 °C~150 °C
  • 極性
    N-channel
  • 特長
    Programmable OCP, Fixed at 160A

OPN
CSF04ISCH90LT1AUMA1
製品ステータス active and preferred
インフィニオン パッケージ
パッケージ名 N/A
梱包サイズ 5000
梱包形態 TAPE & REEL
MSL (湿度感受性レベル) 1
防湿梱包 DRY
鉛フリー No
ハロゲンフリー Yes
RoHS対応 Yes
組立国
CN
ウェハ製造国
DE

製品ステータス
Active
インフィニオン パッケージ
パッケージ名 -
梱包サイズ 5000
梱包形態 TAPE & REEL
MSL (湿度感受性レベル) 1
防湿梱包 DRY
鉛フリー
ハロゲンフリー
RoHS準拠
組立国
CN
ウェハ製造国
DE
CSF04ISCH90LT1 offers enhanced thermal performance and high-accuracy, lossless current sensing - ideal for three-phase motor drives. It eliminates resistive shunts and enables 10% more current-carrying capability over standard MOSFETs. By reducing thermal losses, it achieves higher power density and more compact designs. Integrated overcurrent and overtemperature protection further reduces external component count and minimizes system footprint.

特長

  • 150oC rated
  • Voltage 40V BV rated
  • High accuracy current sensing up to 150A
  • RDS(on)max = 0.9mΩ
  • Overtemperature fault reported at 145C
  • Overcurrent fault reported at 160A
  • VCC range of 5V to 24V
  • 350ns current sense signal settling time
  • 5MHz internal amplifier BW

利点

  • No need for shunts - smaller PCB size
  • Reduced losses - higher power density
  • Improved system reliability
  • Improved EMI from lower stray inductance
  • Enables more compact design
  • Minimizes external components
  • Support low-cost gate driver
  • Higher current carrying capability
ドキュメント

設計リソース

開発者コミュニティ