CSF04ISCH90LT1
NEW
Active and preferred
RoHS Compliant

CSF04ISCH90LT1

NEW
CSF04ISCH90LT1 is 40V MOSFET with integrated current sensing that delivers higher efficiency and enhanced thermal performance in motor drive systems.

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CSF04ISCH90LT1
CSF04ISCH90LT1


Product details

  • Ciss
    5506 pF
  • Coss
    1779 pF
  • Features
    Programmable OCP, Fixed at 160A
  • ID (@25°C) max
    287 A
  • Moisture Sensitivity Level
    MSL2
  • Operating Temperature range
    -40 °C to 150 °C
  • Package
    PG-TISON-9-1
  • Pin Count
    9 Pins
  • Polarity
    N-channel
  • Ptot
    125 W
  • Qgd
    11 nC
  • QG (typ @10V)
    79 nC
  • RDS (on) (@10V)
    0.9 mΩ
  • RthJA
    50 °C/W
  • Special Features
    Current Sensing, OCP, OTP, UVLO
  • VDS max
    40 V
  • VGS(th) (typ)
    2.3 V
  • VGS
    12 V

OPN
CSF04ISCH90LT1AUMA1
Product Status active and preferred
Infineon Package
Package Name N/A
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Country of Assembly (CoA)
CN
Country of Diffusion (CoD)
DE

Product Status
Active
Infineon Package
Package Name -
Packing Size 5000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
Country of Assembly (CoA)
CN
Country of Diffusion (CoD)
DE
CSF04ISCH90LT1 offers enhanced thermal performance and high-accuracy, lossless current sensing - ideal for three-phase motor drives. It eliminates resistive shunts and enables 10% more current-carrying capability over standard MOSFETs. By reducing thermal losses, it achieves higher power density and more compact designs. Integrated overcurrent and overtemperature protection further reduces external component count and minimizes system footprint.

Features

  • 150oC rated
  • Voltage 40V BV rated
  • High accuracy current sensing up to 150A
  • RDS(on)max = 0.9mΩ
  • Overtemperature fault reported at 145C
  • Overcurrent fault reported at 160A
  • VCC range of 5V to 24V
  • 350ns current sense signal settling time
  • 5MHz internal amplifier BW

Benefits

  • No need for shunts - smaller PCB size
  • Reduced losses - higher power density
  • Improved system reliability
  • Improved EMI from lower stray inductance
  • Enables more compact design
  • Minimizes external components
  • Support low-cost gate driver
  • Higher current carrying capability
Documents

Design resources

Developer community