BGA855N6
Active and preferred
RoHS対応
鉛フリー

BGA855N6

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BGA855N6
BGA855N6

製品仕様情報

  • ICC
    4.8 mA
  • IIP3
    1 dBm
  • NF
    0.6 dB
  • P-1dB (in)
    -11
  • VCC動作 範囲
    1.1 V~3.3 V
  • ゲイン
    17.8 dB
  • 周波数
    1164-1300 MHz
OPN
BGA855N6E6327XTSA1
製品ステータス active and preferred
インフィニオン パッケージ
パッケージ名 N/A
梱包サイズ 12000
梱包形態 TAPE & REEL
MSL (湿度感受性レベル) 1
防湿梱包 NON DRY
鉛フリー Yes
ハロゲンフリー Yes
RoHS対応 Yes
Infineon stock last updated:

製品ステータス
Active
インフィニオン パッケージ
パッケージ名 -
梱包サイズ 12000
梱包形態 TAPE & REEL
MSL (湿度感受性レベル) 1
防湿梱包 NON DRY
鉛フリー
ハロゲンフリー
RoHS準拠
The BGA855N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy.Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands for a frequency range from 1164 MHz to 1300 MHz.The LNA provides 17.8 dB gain and 0.6 dB noise figure at a current consumption of 4.8mA.The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V to 3.3 V supply voltage.

特長

  • GPS LNA for L2/L5 Frequency
  • Improves GPS accuracy into cm range (~30 cm)
  • Improves GPS for indoor navigation
  • 1.2 V support
  • Designed for high precision GPS devices

利点

  • High Accuracy Navigation that enabler for ~30 cm accuracy.
  • High linearity that Ideal for Smartphones 5G NSA ready.
  • Wide Bandwidth and one solution for all GPS system.
  • Backwards compatible with standard GNSS LNA that saves cost of design.
ドキュメント

デザイン リソース

開発者コミュニティ

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