2ED1322S12M
新規設計非推奨
RoHS対応
鉛フリー

2ED1322S12M

1200 V high current half-bridge gate driver IC with integrated bootstrap diode and OCP

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2ED1322S12M
2ED1322S12M


製品仕様情報

  • VBS UVLO (Off)
    11.3 V
  • VBS UVLO (On)
    12.2 V
  • VCC UVLO (Off)
    11.3 V
  • VCC UVLO (On)
    12.2 V
  • コンフィギュレーション
    Half-Bridge
  • チャネル
    2
  • 伝搬遅延オフ
    500 ns
  • 伝搬遅延オン
    500 ns
  • 入力 Vcc (最小)
    13 V
  • 出力電流 (Source)
    2.3 A
  • 出力電流 (Sink)
    4.6 A
  • 絶縁方式
    Functional levelshift SOI (Silicon On Insulator)
  • 製品名
    2ED1322S12M
  • 認定
    Industrial
  • 電圧クラス
    1200 V

OPN
2ED1322S12MXUMA1
製品ステータス not for new design
インフィニオン パッケージ
パッケージ名 N/A
梱包サイズ 1000
梱包形態 TAPE & REEL
MSL (湿度感受性レベル) 3
防湿梱包 DRY
鉛フリー Yes
ハロゲンフリー Yes
RoHS対応 Yes
組立国
ID
ウェハ製造国
MY

製品ステータス not for new design
インフィニオン パッケージ
パッケージ名 -
梱包サイズ 1000
梱包形態 TAPE & REEL
MSL (湿度感受性レベル) 3
防湿梱包 DRY
鉛フリー
ハロゲンフリー
RoHS準拠
組立国
ID
ウェハ製造国
MY
EiceDRIVER™ 1200 V half-bridge gate driver IC with typical 2.3 A source, 4.6 A sink current and cross conduction prevention in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1322S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.

特長

  • Floating channel for bootstrap op.
  • Max. boots. volt. (VB node) +1225 V
  • Operating voltages < + 1200 V
  • Negative VS transient vol. immunity
  • 2.3 A/4.6 A peak output source/sink
  • Integrated over-current protection
  • ± 5% high accu. reference threshold
  • Less than 1 us over-current sens
  • Integr. ultra-fast bootstrap diode
  • Dead-time & shoot-through preventi.
  • Enable, Fault & programmable Fault
  • Logic operational < –8 V on VS Pin

利点

  • Reduced BOM cost
  • Smaller PCB space
  • Design flexibility
  • Increased reliability/robustness
  • 50% lower level shift losses leads
  • Lower temperature operation
  • Higher reliability
  • Latch-up immune increased reliability
  • Fast & accurate over-current protection
  • Provides space and cost savings
  • Protects the switches
  • Protection at low supply voltage
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