新規設計は非推奨
RoHS準拠
鉛フリー

SPA11N60CFD

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SPA11N60CFD
SPA11N60CFD

Product details

  • ID max
    11 A
  • ID (@25°C) max
    11 A
  • IDpuls max
    28 A
  • Ptot max
    33 W
  • QG
    48 nC
  • QG (typ @10V)
    48 nC
  • RDS (on) max
    440 mΩ
  • RDS (on) (@10V) max
    440 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    3.8 K/W
  • Rth
    3.8 K/W
  • VDS max
    600 V
  • VGS(th)
    3 V to 5 V
  • Package
    TO-220 FullPAK
  • Budgetary Price €/1k
    1.1
  • Operating Temperature min
    -55 °C
  • Mounting
    THT
  • Polarity
    N
OPN
SPA11N60CFDXKSA1
製品ステータス not for new design
インフィニオンパッケージ
パッケージ名 TO220 FullPAK
包装サイズ 500
包装形態 TUBE
水分レベル NA
モイスチャーパッキン NON DRY
鉛フリー Yes
ハロゲンフリー Yes
RoHS準拠 Yes
Infineon stock last updated:

製品ステータス not for new design
インフィニオンパッケージ
パッケージ名 TO220 FullPAK
包装サイズ 500
包装形態 TUBE
水分レベル NA
モイスチャーパッキン NON DRY
鉛フリー
ハロゲンフリー
RoHS対応
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. Replacement for CoolMOS™ CFD is 600V CoolMOS™ CFD7  
 
Characteristics and applications of CoolMOS ™ CFD2
Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.

機能

  • Fourth series of CoolMOS™ market entry in 2004
  • Fast Body Diode, Qrr 1/10th of C3 series, Vth 4 V, g fs high, Rg low
  • Specific for phase-shift ZVS and DC-AC power applications

利点

  • Improved efficiency
  • More efficient, more compact, lighter and cooler
  • Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness

用途

ドキュメント

デザイン リソース

開発者コミュニティ

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