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IPQC60T022S7

600 V CoolMOS™ S7T SJ MOSFET with integrated temperature sensor in Q-DPAK BSC (PG-HDSOP-22) for an increased junction temperature sensing accuracy

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IPQC60T022S7
IPQC60T022S7

Product details

  • ID (@25°C) max
    90 A
  • IDpuls max
    371 A
  • QG
    150 nC
  • RDS (on) max
    22 mΩ
  • VDS max
    600 V
  • VGS(th)
    4 V
  • Package
    Q-DPAK bottom-side cooled
  • Budgetary Price €/1k
    5.6
  • Mounting
    SMT
  • Polarity
    N
OPN
IPQC60T022S7XTMA1
製品ステータス active and preferred
インフィニオンパッケージ
パッケージ名 Q-DPAK bottom-side cooled
包装サイズ 750
包装形態 TAPE & REEL
水分レベル 1
モイスチャーパッキン NON DRY
鉛フリー Yes
ハロゲンフリー Yes
RoHS準拠 Yes
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製品ステータス
Active
インフィニオンパッケージ
パッケージ名 Q-DPAK bottom-side cooled
包装サイズ 750
包装形態 TAPE & REEL
水分レベル 1
モイスチャーパッキン NON DRY
鉛フリー
ハロゲンフリー
RoHS対応
The CoolMOS™ S7T with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS.The temperature sensor enhances CoolMOS™ S7 features, allowing the best possible utilization of the power transistor.

機能

  • Optimized price performance
  • Tailored for low-frequency switching
  • Reduced parasitic source inductance
  • Seamless diagnostics
  • Accurate and fast monitoring over time
  • High current capability
  • Enhanced protection
  • Optimized thermal device utilization
  • Cutting-edge top-side-cooled package

利点

  • Minimized conduction losses
  • Increased system performances
  • Allow more compact design over EMR
  • Lower TCO over prolonged time
  • Enabling higher power density designs
  • Reduction of external sensing elements
  • Best utilization of power transistor
  • 40% more accurate than discrete sensor
  • 4x faster than discrete sensor solution
  • Optimal PCB space utilization
  • Enabling functional safety
  • Best-in-class thermal dissipation

用途

ドキュメント

デザイン リソース

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