新規設計は非推奨
RoHS準拠
鉛フリー

BGSX24MU16

High Power DP4T Cross Switch

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BGSX24MU16
BGSX24MU16

Product details

  • サイズ
    2.0 x 2.0 mm²
  • スイッチ タイプ
    DP4T
  • 制御インターフェース
    MIPI
  • 周波数範囲
    0.1 - 5.0 GHz
OPN
BGSX24MU16E6327XTSA1
製品ステータス not for new design
インフィニオンパッケージ
パッケージ名 N/A
包装サイズ 4500
包装形態 TAPE & REEL
水分レベル 1
モイスチャーパッキン NON DRY
鉛フリー Yes
ハロゲンフリー Yes
RoHS準拠 Yes
Infineon stock last updated:

製品ステータス not for new design
インフィニオンパッケージ
パッケージ名 -
包装サイズ 4500
包装形態 TAPE & REEL
水分レベル 1
モイスチャーパッキン NON DRY
鉛フリー
ハロゲンフリー
RoHS対応
The BGSX24MU16 RF CMOS switch is specifically designed for LTE and WCDMA quadruple antenna applications. This DP4T offers low insertion loss and low harmonic generation. The switch is controlled via a MIPI RFFE controller. The on-chip controller allows power-supply voltages from 1.65 to 1.95 V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX24MU16 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 2.0 x 2.0 mm2 and a maximum thickness of 0.59 mm.

機能

  • RF CMOS DP4T antenna cross switch with power handling capability of up to 36.5 dBm
  • Suitable for multi-mode LTE and WCDMA quadruple antenna applications
  • Low insertion loss and harmonics generation
  • 0.1 to 5.0 GHz frequency coverage
  • High port-to-port-isolation
  • No blocking capacitors required if no DC applied on RF lines
  • Integrated MIPI RFFE interface operating in 1.65 to 1.95V voltage range
  • Software programmable MIPI RFFE USID
  • Leadless and halogen free package PG-ULGA-16-1 with lateral size of 2.0 mm x 2.0 mm and thickness of 0.59 mm
  • No power supply decoupling required
  • High EMI robustness
  • RoHS and WEEE compliant package

ドキュメント

デザイン リソース

開発者コミュニティ

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