Active and preferred
RoHS準拠
鉛フリー

BGSX22G5A10

DPDT Antenna Cross Switch
EA.
在庫あり

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BGSX22G5A10
BGSX22G5A10
EA.

Product details

  • Pmax
    39 dBm
  • サイズ
    1.1 x 1.5 mm²
  • スイッチ タイプ
    DPDT
  • 制御インターフェース
    GPIO
  • 周波数範囲
    0.1 - 6.0 GHz
  • 挿入損失 (@1GHz)
    0.28 dB
  • 絶縁 (@1GHz)
    49 dB
  • 電源電圧
    1.65 V to 3.4 V
OPN
BGSX22G5A10E6327XTSA1
製品ステータス active and preferred
インフィニオンパッケージ
パッケージ名 N/A
包装サイズ 4500
包装形態 TAPE & REEL
水分レベル 1
モイスチャーパッキン NON DRY
鉛フリー Yes
ハロゲンフリー Yes
RoHS準拠 Yes
Infineon stock last updated:
EA. 在庫あり

製品ステータス
Active
インフィニオンパッケージ
パッケージ名 -
包装サイズ 4500
包装形態 TAPE & REEL
水分レベル 1
モイスチャーパッキン NON DRY
鉛フリー
ハロゲンフリー
RoHS対応
EA.
在庫あり
The BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G5A10 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.5mm2 and a maximum thickness of 0.55 mm.

機能

  • RF CMOS DPDT antenna cross switch with power handling capability of up to 37 dBm
  • Ultra-low insertion loss and harmonics generation
  • 0.1 to 6.0 GHz coverage
  • High port-to-port-isolation
  • No decoupling capacitors required if no DC applied on RF lines
  • General Purpose Input-Output (GPIO) Interface
  • Small form factor 1.1mm x 1.5mm
  • No power supply blocking required
  • High EMI robustness
  • RoHS and WEEE compliant package

ドキュメント

デザイン リソース

開発者コミュニティ

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