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SPI08N80C3
SPI08N80C3

Product details

  • ID (@25°C) max
    8 A
  • ID max
    8 A
  • IDpuls max
    24 A
  • Ptot max
    104 W
  • QG
    40 nC
  • QG (typ @10V)
    40 nC
  • RDS (on) max
    650 mΩ
  • RDS (on) (@10V) max
    650 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    1.2 K/W
  • Rth
    1.2 K/W
  • VDS max
    800 V
  • VGS(th)
    2.1 V to 3.9 V
  • Package
    I2PAK (TO-262)
  • Operating Temperature min
    -55 °C
  • Mounting
    THT
  • Polarity
    N
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
Replacement for CoolMOS™ C3 is CoolMOS™ P7 800V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio.

機能

  • Low specific on-state resistance (RDS(on)*A)
  • Very low energy storage in output capacitance (Eoss) @400V
  • Low gate charge (Qg)
  • Fieldproven CoolMOS™ quality
  • CoolMOS™ technology has been manufactured by Infineon since 1998

利点

  • High efficiency and power density
  • Outstanding cost/performance
  • High reliability
  • Ease-of-use

用途

ドキュメント

デザイン リソース

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