IRF6714M

25V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MX package

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IRF6714M
IRF6714M

Product details

  • ID (@25°C) max
    166 A
  • Ptot max
    89 W
  • Ptot (@ TA=25°C) max
    2.8 W
  • Qgd
    8.3 nC
  • QG (typ @4.5V)
    29 nC
  • RDS (on) (@4.5V) max
    3.4 mΩ
  • RDS (on) (@10V) max
    2.1 mΩ
  • RthJC max
    1.4 K/W
  • Tj max
    150 °C
  • VDS max
    25 V
  • VGS(th)
    1.9 V
  • VGS max
    20 V
  • パッケージ
    DirectFET (M)
  • マイクロステンシル
    IRF66MX-25
  • モイスチャー感度レベル
    1
  • 予算価格€/ 1k
    0.74
  • 動作温度
    -40 °C to 150 °C
  • 実装
    SMD
  • 極性
    N
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

機能

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • High-current rating
  • Dual-side cooling capability
  • Low package height of 0.7mm
  • Low parasitic (1-2 nH) inductance package
  • 100% lead-free (No RoHS exemption)

利点

  • Wide availability from distribution partners
  • Industry standard qualification level
  • High current carrying capability
  • Optimum thermal performance
  • Compact form factor
  • High efficiency
  • Environmentally friendly

用途

ドキュメント

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