IPT65R033G7

A new SMD package using Kelvin source concept
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IPT65R033G7
IPT65R033G7
データシート

Product details

  • ID max
    69 A
  • ID (@25°C) max
    69 A
  • IDpuls max
    245 A
  • Ptot max
    391 W
  • Qgd
    35 nC
  • QG
    110 nC
  • QG (typ @10V)
    110 nC
  • RDS (on) max
    33 mΩ
  • RDS (on) (@10V) max
    33 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.32 K/W
  • Rth
    0.32 K/W
  • Tj
    -55 °C to 150 °C
  • VDS max
    650 V
  • VGS(th)
    3 V to 4 V
  • パッケージ
    TOLL (HSOF-8)
  • ピン数
    8 Pins
  • 予算価格€/ 1k
    7.8
  • 動作温度
    -55 °C to 150 °C
  • 実装
    SMT
  • 極性
    N
  • 特別な機能
    highest performance
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
The CoolMOS™ C7 Gold superjunction MOSFET series (G7) for the first time brings together the benefits of the improved 650V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TOLL package to enable an SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW.

機能

  • Gives best-in-class FOM R DS(on)*E oss and R DS(on)*Q G
  • Enables best-in-class R DS(on) in smallest footprint
  • Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance (~1nH)
  • Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
  • Enables improved thermal performance R th

利点

  • FOM R DS(on)xQ G is 14% better than previous 650V CoolMOS™ C7 enabling faster switching leading to higher efficiency
  • Power density trough BIC 33mΩ in 115mm 2 TOLL footprint
  • Reducing parasitic source inductance by Kelvin source improves efficiency switching and ease-of-use
  • TOLL package is easy to use and has the highest quality standards
  • Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible

用途

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