IPS60R280PFD7S

IPS60R280PFD7S

600V CoolMOS™ PFD7 superjunction MOSFET in TO-251 IPAK short-lead package
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IPS60R280PFD7S
IPS60R280PFD7S
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製品仕様情報

  • ID (最大)
    12 A
  • ID (@25°C) (最大)
    12 A
  • IDpuls (最大)
    31 A
  • Ptot (最大)
    51 W
  • QG
    15.3 nC
  • QG (typ @10V)
    15.3 nC
  • RDS (on) (@10V) (最大)
    280 mΩ
  • RDS (on) (最大)
    280 mΩ
  • VDS (最大)
    600 V
  • VGS(th) 範囲
    3.5 V～4.5 V
  • VGS(th)
    4 V
  • パッケージ
    IPAK
  • ピン数
    3 Pins
  • 動作温度 範囲
    -40 °C～150 °C
  • 実装
    THT
  • 極性
    N
  • 特別な機能
    price/performance
OPN
製品ステータス
インフィニオン パッケージ
パッケージ名
梱包サイズ
梱包形態
MSL (湿度感受性レベル)
防湿梱包
鉛フリー
ハロゲンフリー
RoHS対応
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The 600V CoolMOS™ PFD7 superjunction MOSFET (IPS60R280PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPS60R280PFD7S in a TO-251 IPAK SL package features RDS(on) of 280mOhms resulting in low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced BOM for the customer. This product family is tailored to ultra-high power density as well as highest efficiency designs. The products primarily address ultra-high density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency over CoolMOS™ P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

特長

  • Very low FOM RDS(on) x Eoss
  • Integrated robust fast body diode
  • Up to 2kV ESD protection
  • Wide range of RDS(on) values
  • Excellent commutation ruggedness
  • Low EMI
  • Broad package portfolio

利点

  • Minimized switching losses
  • Power density improvement compared to latest CoolMOS™ charger technology
  • Increased efficiency and improved thermal behavior compared to CoolMOS™ CE technology for low power drives applications
  • BOM cost reduction and easy manufacturing
  • Robustness and reliability
  • Easy to select the right parts for design fine-tuning

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