IPI65R190CFD

データシート

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IPI65R190CFD
IPI65R190CFD
データシート

Product details

  • ID (@25°C) max
    17.5 A
  • ID max
    17.5 A
  • IDpuls max
    57.2 A
  • Ptot max
    151 W
  • QG
    68 nC
  • QG (typ @10V)
    68 nC
  • RDS (on) max
    360 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    0.83 K/W
  • Rth
    0.83 K/W
  • VDS max
    650 V
  • VGS(th)
    3.5 V to 4.5 V
  • Package
    I2PAK, I2PAK
  • Budgetary Price €/1k
    1.45
  • Operating Temperature min
    -55 °C
  • Mounting
    THT
  • Polarity
    N
  • Special Features
    fast recovery diode
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

機能

  • 650V technology with integrated fast body diode
  • Limited voltage overshoot during hard commutation
  • Significant Qg reduction compared to 600V CFD technology
  • Tighter RDS(on) max to RDS(on) typ window
  • Easy to design-in
  • Lower price compared to 600V CFD technology

利点

  • Low switching losses due to low Qrr at repetitive commutation on body diode
  • Self limiting di/dt and dv/dt
  • Low Qoss
  • Reduced turn on and turn of delay times
  • Outstanding CoolMOS™ quality

用途

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