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RoHS準拠

IAUCN08S7L110

80 V, N-Ch, 11 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7
EA.
在庫あり

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IAUCN08S7L110
IAUCN08S7L110
EA.

Product details

  • Currently planned availability until at least
    2038
  • ID (@25°C) max
    40 A
  • IDpuls (@25°C) max
    40 A
  • QG (typ @10V)
    14.8 nC
  • RDS (on) (@10V) max
    11 mΩ
  • VDS max
    80 V
  • VGS(th)
    1.6 V
  • Package
    PG-TDSON-8
  • Operating Temperature
    -55 °C to 175 °C
  • Technology
    OptiMOS™-7
  • Polarity
    N
  • Launch year
    2024
  • Qualification
    Automotive
OPN
IAUCN08S7L110ATMA1
製品ステータス active and preferred
インフィニオンパッケージ
パッケージ名 Single SSO8
包装サイズ 5000
包装形態 TAPE & REEL
水分レベル 1
モイスチャーパッキン NON DRY
鉛フリー No
ハロゲンフリー Yes
RoHS準拠 Yes
Infineon stock last updated:
EA. 在庫あり

製品ステータス
Active
インフィニオンパッケージ
パッケージ名 Single SSO8
包装サイズ 5000
包装形態 TAPE & REEL
水分レベル 1
モイスチャーパッキン NON DRY
鉛フリー
ハロゲンフリー
RoHS対応
EA.
在庫あり
Infineon introduces another MOSFET utilizing its next, leading edge, power technology; OptiMOS™ 7 80 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.

機能

  • Fast switching times (turn on/off)
  • Low on-resistance, RDS(on)
  • Leading edge FOM (RDS(on) x Qg)
  • Low package resistance and inductance
  • High avalanche current capability
  • High SOA ruggedness
  • Tight threshold voltage, VGS(th), range
  • Excellent thermal performance
  • Extended qualification beyond AEC-Q101
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • PPAP Capable Device

利点

  • Superior switching performance
  • Very low conduction losses
  • Highest power density in 5x6 mm2 package
  • High power efficiency
  • Well suited for parallel placement
  • Increased design ruggedness
  • Designed for automotive robustness
  • High quality production for automotive
  • Enhanced electrical testing

用途

ドキュメント

デザイン リソース

開発者コミュニティ

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