BSZ058N03MS G

データシート

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BSZ058N03MS G
BSZ058N03MS G
データシート

Product details

  • Ciss
    2300 pF
  • Coss
    710 pF
  • ID (@25°C) max
    40 A
  • IDpuls max
    160 A
  • Ptot max
    45 W
  • QG (typ @4.5V)
    14 nC
  • QG (typ @10V)
    30 nC
  • RDS (on) (@10V) max
    5 mΩ
  • RDS (on) (@4.5V) max
    6.4 mΩ
  • RDS (on) (@4.5V LL) max
    6.4 mΩ
  • RthJC max
    2.8 K/W
  • Rth
    2.8 K/W
  • VDS max
    30 V
  • VGS(th)
    1 V to 2 V
  • Package
    PQFN 3.3 x 3.3
  • Operating Temperature
    -55 °C to 150 °C
  • Polarity
    N
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

機能

  • Ultra low gate and output charge
  • Lowest on-state resistance in small footprint packages
  • Easy to design in

利点

  • Increased battery lifetime
  • Improved EMI behavior making external snubber networks obsolete
  • Saving costs
  • Saving space
  • Reducing power losses

用途

ドキュメント

ドキュメント

デザイン リソース

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