TRENCHSTOP™ IGBT7

概要

1200 V TRENCHSTOP™ IGBT7 - Higher power density and optimised switching

The 1200 V TRENCHSTOP™ IGBT7 and EC7 diode technology is based on latest micro-pattern trenches technology which provide strongly reduced losses and offer a high level of controllability. The chip is specially optimized for industrial drives applications, which means much lower static losses, higher power density and softer switching. Additionally, by raising the allowed maximum operation temperature up to 175 °C in the power module, a significant increase of power density can be obtained.

詳細

Key features	Customer Benefits
Lowest on state voltage V_CE(sat) and V_f T_{vj op}=175°C at overload Enhanced controllability of dv/dt Optimized switching losses for dv/dt = 5kV/µs 8 μs short-circuit robustness Improved FWD softness	Higher power density due to use of smaller power modules (e.g. 25A PIM in Easy1B) Low losses to meet energy efficiency requirements Optimised trade-off between losses and EMI Lower system cost

Infineon products
The first leadtypes of EasyPIM™ und EasyPACK™ with TRENCHSTOP™ IGBT7 from 10 to 100 A: FP10R12W1T7_B11 FP25R12W1T7_B11 FS100R12W2T7_B11

Infineon products

The first leadtypes of EasyPIM™ und EasyPACK™ with TRENCHSTOP™ IGBT7 from 10 to 100 A:

FP10R12W1T7_B11
FP25R12W1T7_B11
FS100R12W2T7_B11

Technical benefits of TRENCHSTOP™ IGBT7

Best-in-class VCE(sat)

Operation at 175°C at overload

Enhanced controllability optimized for drive applications

Higher power density - Same power in 35% smaller package

Easy with TRENCHSTOP™ IGBT7 - Planned portfolio 1200 V

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