IRFU3910

IRFU3910

100V Single N-Channel Power MOSFET in an I-Pak package

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IRFU3910
IRFU3910


製品仕様情報

  • ID (@25°C) (最大)
    16 A
  • Ptot (最大)
    52 W
  • Qgd
    14 nC
  • QG (typ @10V)
    29.3 nC
  • RDS (on) (@10V) (最大)
    115 mΩ
  • RthJC (最大)
    2.4 K/W
  • Tj (最大)
    175 °C
  • VDS (最大)
    100 V
  • VGS(th) 範囲
    2 V~4 V
  • VGS(th)
    3 V
  • VGS (最大)
    20 V
  • パッケージ
    IPAK (TO-251)
  • 予算価格€/ 1k
    0.21
  • 動作温度 範囲
    -55 °C~175 °C
  • 実装
    THT
  • 極性
    N

OPN
製品ステータス
インフィニオン パッケージ
パッケージ名
梱包サイズ
梱包形態
MSL (湿度感受性レベル)
防湿梱包
鉛フリー
ハロゲンフリー
RoHS対応
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

特長

  • Planar cell structure for wide SOA
  • Optimized for broadest availability
  • Product qualification according to JEDEC
  • Silicon optimized for applications
  • Industry standard through-hole power

利点

  • Increased ruggedness
  • Wide availability at distribution
  • Industry standard qualification level
  • High performance, low-frequency
  • Drop-in replacement with standard pinout

アプリケーション

ドキュメント

設計リソース

開発者コミュニティ