シリコンダイオード

概要

Perfect cost/performance balance, targeting high efficiency applications switching between 18kHz and 100kHz

シリコンダイオードサブカテゴリー

The Silicon Power Rapid Diode family complements Infineon’s existing high power 600V/650V diode portfolio by filling the gap between SiC diodes and previously released emitter-controlled diodes. Rapid 1 and Rapid 2 diodes are optimized to have excellent compatibility with CoolMOS™ and high speed IGBT (Insulated Gate Bipolar Transistor) such as the TRENCHSTOP™ 5 and HighSpeed 3.

製品

ハイライト

CoolSiC™ schottky diodes

CoolSiC™ schottky diodes G5 deliver market leading efficiency at attractive cost point. It has been optimized from all key aspects including junction structure, substrate and die attach. It represents a well-balanced product family which offers state-of-the-art performance and high surge capability at competitive cost level.

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650V Rapid 1 and Rapid 2 Si Power Diodes

Infineon's highly efficient, fast recovery 650V Rapid 1 and Rapid 2 silicon diode families combine ultrathin wafer manufacturing expertise for a low loss vertical structure plus unique cell design - the Rapid diodes provide outstanding performance. The devices complement Infineon’s existing high power 600V and 650V diode portfolio by filling the gap between silicon carbide (SiC) diodes and emitter-controlled diodes to address the ultrafast and hyperfast power silicon diode markets.

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High Power Silicon Diodes – Ultra Soft Diodes

Infineon's ultra soft diodes are the proven winner for motor drive applications, offering high efficiency, low conduction losses and excellent cost-performance ratio.