IPAN60R600P7S

IPAN60R600P7S

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use
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IPAN60R600P7S
IPAN60R600P7S
データシート


製品仕様情報

  • ID (最大)
    6 A
  • ID (@25°C) (最大)
    6 A
  • ID (@ TC=25°C) (最大)
    6 A
  • IDpuls (最大)
    16 A
  • Ptot (最大)
    21 W
  • QG
    9 nC
  • QG (typ @10V)
    9 nC
  • RDS (on) (最大)
    600 mΩ
  • RDS (on) (@10V) (最大)
    600 mΩ
  • VDS (最大)
    600 V
  • VGS(th) 範囲
    3 V～4 V
  • VGS(th)
    3.5 V
  • パッケージ
    TO220 FullPAK narrow leads
  • ピン数
    3 Pins
  • 動作温度 範囲
    -40 °C～150 °C
  • 実装
    THT
  • 極性
    N

OPN
製品ステータス
インフィニオン パッケージ
パッケージ名
梱包サイズ
梱包形態
MSL (湿度感受性レベル)
防湿梱包
鉛フリー
ハロゲンフリー
RoHS対応
The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

特長

  • 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
  • ESD ruggedness of ≥ 2kV (HBM class 2)
  • Integrated gate resistor RG
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

利点

  • Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency
  • Ease-of-use
  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated RG reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

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