EVAL_GD_BDS_GAN
Active and preferred

EVAL_GD_BDS_GAN

Gate driver evaluation board for CoolGaN™ BDS, intended to be used with daughter cards EVAL_IGK048B041S_GaN, EVAL_IGK080B041S_GaN, EVAL_IGK120B041S.
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EVAL_GD_BDS_GAN
EVAL_GD_BDS_GAN


製品仕様情報

  • Input current (最大)
    20 A
  • ファミリー
    CoolGaN™
  • 入力電圧 範囲
    5 V～120 V
  • 製品カテゴリ
    CoolGaN™

推奨
OPN
EVALGDBDSGANTOBO1
製品ステータス active and preferred
インフィニオン パッケージ L
パッケージ名 N/A
梱包サイズ 1
梱包形態 CONTAINER
MSL (湿度感受性レベル) NA
防湿梱包 NON DRY
鉛フリー No
ハロゲンフリー No
RoHS対応 No

製品ステータス
Active
インフィニオン パッケージ L
パッケージ名 -
梱包サイズ 1
梱包形態 CONTAINER
MSL (湿度感受性レベル) NA
防湿梱包 NON DRY
鉛フリー
ハロゲンフリー
RoHS準拠
EVAL_GD_BDS_GaN is an evaluation board designed to drive a GaN bidirectional switch (BDS) with drain voltages up to 120 V. It features a single-channel isolated 1EDB7275F gate driver and a connector for attaching different GaN BDS daughter cards. The board lets users choose the gate-drive return path depending on the direction of current flow, making it fit for applications such as e-Fuse, USB‑C PD, smartphones, notebooks, and docking stations.

特長

  • Gate driver for GaN BDS
  • Input voltage range of 5 V to 120 V
  • Max. load current of 20 A
  • Isolated gate driver power supply of 5 V
  • Suited to use with EVAL_IGK120B041S_GaN
  • Suited to use with EVAL_IGK080B041S_GaN
  • Suited to use with EVAL_IGK048B041S_GaN

利点

  • Compatible with GaN BDS up to 120 V
  • User-selectable gate drive return path
  • Soft start delay for lower inrush current

アプリケーション

Bill of Material

ドキュメント

デザイン リソース

パートナー ソリューション