IRFB7746

IRFB7746

75V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package
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IRFB7746
IRFB7746
データシート

製品仕様情報

  • ID (@25°C) (最大)
    59 A
  • Ptot (最大)
    99 W
  • Qgd
    16 nC
  • QG (typ @10V)
    55 nC
  • RDS (on) (@10V) (最大)
    10.6 mΩ
  • RthJC (最大)
    1.52 K/W
  • Tj (最大)
    175 °C
  • VDS (最大)
    75 V
  • VGS(th) 範囲
    2.1 V～3.7 V
  • VGS(th)
    2.9 V
  • VGS (最大)
    20 V
  • パッケージ
    TO-220
  • 実装
    THT
  • 極性
    N
OPN
製品ステータス
インフィニオン パッケージ
パッケージ名
梱包サイズ
梱包形態
MSL (湿度感受性レベル)
防湿梱包
鉛フリー
ハロゲンフリー
RoHS対応
Infineon stock last updated:
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

特長

  • Industry standard through-hole power package
  • High-current rating
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100 kHz
  • Softer body-diode compared to previous silicon generation
  • Wide portfolio available

利点

  • Standard pinout allows for drop in replacement
  • High-current carrying capability package
  • Industry standard qualification level
  • High performance in low frequency applications
  • Increased power density
  • Provides designers flexibility in selecting the most optimal device for their application

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