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On the loss - softness trade-off: Are different chip versions needed for softness-improvement?

Infineon’s latest 1200V IGBT4 chip generation, has come in three versions optimized for low, medium and high power applications. Driving force for these distinctions have been varying switching softness requirements related to the applications power or rated current level, respectively. An important influencing factor is given by the implemented stray inductance of the set-up. Increased softness, however, trades off against switching losses from the technology point of view. The aim of this work is to address the effects of stray inductances on the switching performance of the available chip versions in order to derive guidelines for application designs and to investigate pros and cons for choosing one of the given chip optimizations. Besides of switching losses turn-on and turn-off speed, occurrence of snap-off and oscillation (EMI) trends are used as measurement categories. We separate our investigation into a first section addressing turn-on behavior, a second dealing with turn-off, a third addressing diode switching, followed by snap-off considerations for IGBT and diode. Finally we discuss the results with special regards to the overall system performance.

• 731.09 KB
• 2011/01/31