IRLL3303

IRLL3303

30V Single N-Channel IR MOSFET in a SOT-223 package

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IRLL3303
IRLL3303


製品仕様情報

  • ID (@25°C) (最大)
    6.5 A
  • Ptot (@ TA=25°C) (最大)
    2.1 W
  • Qgd
    10 nC
  • QG (typ @10V)
    34 nC
  • RDS (on) (@10V) (最大)
    31 mΩ
  • RDS (on) (@4.5V) (最大)
    45 mΩ
  • RthJA (最大)
    60 K/W
  • Special Features
    Small Power
  • Tj (最大)
    150 °C
  • VDS (最大)
    30 V
  • VGS(th) (最小)
    1 V
  • VGS (最大)
    16 V
  • パッケージ
    SOT-223
  • モイスチャー感度レベル
    1
  • 実装
    SMD
  • 極性
    N

OPN
製品ステータス
インフィニオン パッケージ
パッケージ名
梱包サイズ
梱包形態
MSL (湿度感受性レベル)
防湿梱包
鉛フリー
ハロゲンフリー
RoHS対応
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

特長

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard surface mount package

利点

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • High performance in low frequency applications
  • Standard pinout allows for drop in replacement

アプリケーション

ドキュメント

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