IPC302N25N3

データシート

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IPC302N25N3
IPC302N25N3
データシート

Product details

  • EAS/Avalanche Energy
    40 mJ
  • RDS (on)
    16 mΩ
  • RDS (on) (@10V) max
    100 mΩ
  • VBRDSS max
    250 V
  • VDS
    250 V
  • VDS max
    250 V
  • VGS(th)
    2 V to 4 V
  • Die Size (Y)
    4.5 mm
  • Die Size (Area)
    30.15 mm²
  • Die Size (X)
    6.7 mm
  • Mode
    Enhancement
  • Output Drivers
    1
  • Thickness
    250
  • Technology
    OptiMOS™ 3
  • Polarity
    N
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
With OptiMOS™ 200V and 250V Infineon continues to deliver best-in-class on-state resistance (R DS(on)) power MOSFETs with unique performance. The leading R DS(on) and figure of merit (FOM) characteristics reduce power losses, improve overall efficiency and increase power density. The 200V and 250V product families are optimized for applications such as lighting for 110V AC networks, HID lamps, DC-DC converters and power over ethernet (PoE).

機能

  • Industry’s lowest R DS(on)
  • Lowest Qg and Qgd
  • World’s lowest FOM

利点

  • Highest efficiency
  • Highest power density
  • Lowest board space consumption
  • Less paralleling required
  • System cost improvement
  • Easy-to-design products
  • Environmentally friendly

用途

ドキュメント

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