IPC302N25N3

Data Sheet

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IPC302N25N3
IPC302N25N3
Data Sheet

Product details

  • Die Size (Y)
    4.5 mm
  • Die Size (Area)
    30.15 mm²
  • Die Size (X)
    6.7 mm
  • EAS/Avalanche Energy
    40 mJ
  • Mode
    Enhancement
  • Output Drivers
    1
  • Polarity
    N
  • RDS (on)
    16 mΩ
  • RDS (on) (@10V) max
    100 mΩ
  • Technology
    OptiMOS™ 3
  • Thickness
    250
  • VBRDSS max
    250 V
  • VDS
    250 V
  • VDS max
    250 V
  • VGS(th)
    2 V to 4 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
With OptiMOS™ 200V and 250V Infineon continues to deliver best-in-class on-state resistance (R DS(on)) power MOSFETs with unique performance. The leading R DS(on) and figure of merit (FOM) characteristics reduce power losses, improve overall efficiency and increase power density. The 200V and 250V product families are optimized for applications such as lighting for 110V AC networks, HID lamps, DC-DC converters and power over ethernet (PoE).

Features

  • Industry’s lowest R DS(on)
  • Lowest Qg and Qgd
  • World’s lowest FOM

Benefits

  • Highest efficiency
  • Highest power density
  • Lowest board space consumption
  • Less paralleling required
  • System cost improvement
  • Easy-to-design products
  • Environmentally friendly

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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