新規設計は非推奨
RoHS準拠
鉛フリー

AIMW120R035M1H

The CoolSiC™ MOSFETs for Automotive family has been developed for current & future On-Board Charger & DC-DC applications in hybrid & electric vehicles
データシート
パッケージ
EA.
在庫あり

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AIMW120R035M1H
AIMW120R035M1H
EA.
データシート

Product details

  • Currently planned availability until at least
    2033
  • ID (@25°C) max
    52 A
  • RDS (on) (@ Tj = 25°C)
    35 mΩ
  • VDS max
    1200 V
  • 動作温度
    -55 °C to 175 °C
  • 技術
    CoolSiC™ G1
  • 極性
    N
  • 発売年
    2021
  • 認定
    Automotive
OPN
AIMW120R035M1HXKSA1
製品ステータス not for new design
インフィニオンパッケージ
PG-TO247-3
パッケージ名 TO247
包装サイズ 240
包装形態 TUBE
水分レベル NA
モイスチャーパッキン NON DRY
鉛フリー Yes
ハロゲンフリー Yes
RoHS準拠 Yes
Infineon stock last updated:
 EA. 在庫あり

製品ステータス not for new design
インフィニオンパッケージ
PG-TO247-3
パッケージ名 TO247
包装サイズ 240
包装形態 TUBE
水分レベル NA
モイスチャーパッキン NON DRY
鉛フリー
ハロゲンフリー
RoHS対応
EA.
在庫あり
The AIMW120R035M1H is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance.The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost decrease of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles. The superior gate oxide reliability as well as the best-in-class Infineon SiC Quality Extension guarantees very long and safe lifetime and can even fulfill very tough mission profile requirements. Further features such as lowest gate charge and device capacitances levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics guarantee an hustle-free design-in and easy-to-control application design.

機能

  • semiconductor material - Silicon Carbide
  • Very low switching losses
  • Threshold-free on state characteristic
  • IGBT-compatible driving voltage
  • 0 V turn-off gate voltage
  • Gate Threshold Voltage: VGS(th)=4.5V
  • Synchronous-ready robust body diode
  • Temp independent turn-off switching loss

利点

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost

用途

ドキュメント

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