not for new design
RoHS Compliant
Lead-free

AIMW120R035M1H

The CoolSiC™ MOSFETs for Automotive family has been developed for current & future On-Board Charger & DC-DC applications in hybrid & electric vehicles
Data Sheet
package
ea.
in stock

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AIMW120R035M1H
AIMW120R035M1H
ea.
Data Sheet

Product details

  • ID (@25°C) max
    52 A
  • Launch year
    2021
  • Operating Temperature
    -55 °C to 175 °C
  • Planned to be available until at least
    2033
  • Polarity
    N
  • Qualification
    Automotive
  • RDS (on) (@ Tj = 25°C)
    35 mΩ
  • Technology
    CoolSiC™ G1
  • VDS max
    1200 V
OPN
AIMW120R035M1HXKSA1
Product Status not for new design
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status not for new design
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The AIMW120R035M1H is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance.The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost decrease of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles. The superior gate oxide reliability as well as the best-in-class Infineon SiC Quality Extension guarantees very long and safe lifetime and can even fulfill very tough mission profile requirements. Further features such as lowest gate charge and device capacitances levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics guarantee an hustle-free design-in and easy-to-control application design.

Features

  • semiconductor material - Silicon Carbide
  • Very low switching losses
  • Threshold-free on state characteristic
  • IGBT-compatible driving voltage
  • 0 V turn-off gate voltage
  • Gate Threshold Voltage: VGS(th)=4.5V
  • Synchronous-ready robust body diode
  • Temp independent turn-off switching loss

Benefits

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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