EVAL_1EDF_G1_HB_GAN

CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

EVAL_1EDF_G1_HB_GAN
EVAL_1EDF_G1_HB_GAN

製品詳細

  • Pout
    0 W to 2500 W
  • Interfaces
    MMCX, Pluggable terminal block (Supplied)
  • Topology
    Boost, Buck, Half Bridge, LLC
  • Family
    CoolGaN™ EiceDRIVER™
  • Board Type
    Evaluation Board
  • Input Type
    DC
  • Output Voltage
    0 V to 450 V
  • Output Current
    0 A to 35 A
  • Frequency
    0 MHz to 3 MHz
  • Dimensions
    75 x 75 x 40 mm³
  • Target Application
    Power Supplies
  • Product Name
    EVAL_1EDF_G1_HB_GAN
  • Qualification
    Industrial
  • Supply Voltage
    0 V to 450 V
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
The 600V gallium nitride (GaN) half-bridge evaluation board enables rapid setup and testing of CoolGaN™ transistors for boost, buck, pulse, or continuous full-power operations. It eliminates the need for a gate driver and power circuit design, offering up to 12A continuous currents, 35A peak currents, and an operating frequency of several MHz.

機能

  • GaN half-bridge with GaN driver ICs
  • Multi-MHz switching frequencies
  • Zero reverse-recovery
  • Shift between hard, soft switching
  • Top-side cooling, power dissipation

利点

  • Easy setup and use
  • Multiple configurations possible
  • GaN high-frequency evaluation
  • Evaluation: LR, overshoot, EMI
  • Multi kW power levels evaluation

用途

Bill of Material

ドキュメント

ドキュメント

デザイン リソース

パートナー ソリューション

開発者コミュニティ

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "コミュニティに質問する", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/", "label" : "製品フォーラムのディスカッション", "labelEn" : "View all discussions" } ] }