SiC(シリコンカーバイド)

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Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group. They offer a number of attractive characteristics for high- voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow creating devices which outperform by far the corresponding Si ones. This way you can reach unattainable efficiency levels in your designs.



CoolSiC™ - Revolution to rely on

Infineon CoolSiC™ semiconductor solutions are the next step towards an energy-smart world. Combining revolutionary SiC technology with extensive system understanding, best-in-class packaging, and manufacturing excellence, Infineon CoolSiC™ enables you to develop radical new product designs with best system cost-performance ratio.

 


CoolSiC™ MOSFET 1200V

CoolSiC™ MOSFET  

The CoolSiC™ MOSFET 1200V is the leading edge solution to bring designs towards new unattainable efficiency- and power density levels. CoolSiC™ MOSFET represents the best solution for solar, UPS and industrial drives applications by combining best performance reliability, safety and ease of use.

CoolSiC™ MOSFETs 1200V

 


CoolSiC™ schottky diode G5

CoolSiC™ Schottky  

CoolSiC™ schottky diodes G5 deliver market leading efficiency at attractive cost point. It has been optimized from all key aspects including junction structure, substrate and die attach. It represents a well-balanced product family which offers state-of-the-art performance and high surge capability at competitive cost level.

CoolSiC™ schottky diodes 650V G5

CoolSiC™ schottky diodes 1200V G5



1200V CoolSiC  

 

 

5世代1200V CoolSiC™ショットキーダイオード

1200V SiCダイオードをSiの「HighSpeed 3IGBTと組み合わせると、逆回復損失をゼロにしてよりシンプルな2レベルのトポロジを実現できます。SiIGBTのターンオン損失も40%低減され、EMI(電磁干渉)も低減されます。さらに、Siベースのソリューションと比べると、熱性能が改善されることで接合部温度も15%低くなります。これによってシステムの信頼性が高まり、同じフォームファクターでも高い出力を得られる可能性があります。 5世代1200V CoolSiC™ショットキーダイオードの詳細


 

650V CoolSiC  

 

 

5世代650V CoolSiC™ショットキーダイオード

5世代のCoolSiC™は、インフィニオンがSiCショットキー バリアダイオードの分野で新たに提供する最新のテクノロジーであり、最適な価格性能比で他社の追随を許さない効率を実現します。インフィニオン独自の拡散はんだ付けプロセスはすでに第3世代で導入されていますが、第5世代では新たに「コンパクト設計」と「最新の薄型ウェハテクノロジー」という特長が加わりました。 5世代650V CoolSiC™ショットキーダイオードの詳細


Product image PrimePACKIGBT5.XT  

 

 

PrimePACK™(IGBT5および.XT使用)

革新的技術であるIGBT5および.XTが、定評あるPrimePACK™の品揃えをさらに拡張します。この新技術を使うことで、電力密度の25%増加や部品寿命の10倍延長が実現できます。 PrimePACK™(IGBT5および.XT使用)の詳細


Product image Easy 2B - Pressfit - blank  

 

 

 

太陽光発電ストリングおよびマルチストリングインバータ用モジュール

専用設計の太陽光発電ストリングおよびマルチストリングインバータ用モジュール。インバータの効率と性能の最適化を実現します。実績のあるPressFITテクノロジーにより、はんだ付け不要で迅速な組立が可能です。 太陽光発電ストリングおよびマルチストリングインバータ用モジュールの詳細

 

 


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Product Selection Guide

Title Size Date Version
3.5 MB 15 5 2017 01_00
2 MB 14 3 2014 01_00
22.4 MB 29 3 2017 01_00
1.9 MB 03 5 2013 01_00

Product Catalogue

Title Size Date Version
2.9 MB 12 5 2017 03_00

Product Brochure

Title Size Date Version
3.2 MB 15 5 2017 02_00

Product Brief

Title Size Date Version
338 KB 15 5 2017 02_00
466 KB 18 4 2016 01_00
785 KB 24 3 2013 01_00
202 KB 01 12 2012 01_00
776 KB 14 5 2012

Application Brochure

Title Size Date Version
340 KB 23 10 2015 01_00
242 KB 06 9 2017 01_00

Application Notes

Title Size Date Version
12.1 MB 13 9 2016 01_00
1.4 MB 16 11 2015 01_00
6.5 MB 12 7 2017 01_00
731 KB 24 3 2017 01_00
570 KB 31 7 2015 01_00
2.2 MB 19 12 2014 02_00
791 KB 16 6 2014 01_00
4.9 MB 16 12 2013

Editorials

Title Size Date Version
521 KB 04 11 2015 01_00

Article

Title Size Date Version
540 KB 15 5 2017 01_00
471 KB 20 10 2016 01_00
1.7 MB 10 8 2016 01_00
1.2 MB 21 7 2016 01_00
289 KB 04 7 2017 01_00
235 KB 15 5 2017 01_00
772 KB 01 10 2016 01_00
117 KB 21 7 2016 01_00
460 KB 21 7 2016 01_00
530 KB 03 12 2015 01_00
1.6 MB 23 7 2015 01_00
145 KB 12 3 2015 01_00
1.4 MB 10 9 2014 01_00
376 KB 05 9 2014
339 KB 26 9 2012
1.6 MB 01 9 2012 01_00
516 KB 21 5 2012

Application Brief

Title Size Date Version
87 KB 11 7 2017 01_00

Presentations

Title Size Date Version
1,020 KB 11 5 2016 01_00

Whitepaper

Title Size Date Version
105 KB 07 5 2013 01_00
601 KB 01 3 2013 01_00
595 KB 20 11 2007

評価用ボード

ボード ファミリー 詳細 ステータス
EVALPFC3-ICE3PCS02G Diode (Si, SiC), MOSFET, Power Controller (PWM, PFC) PFC CCM ICE3PCS02G for 300 W 400 V SMPS evaluation board with 85~265V AC universal input.
  • ICE3PCS02G
  • IDH04S60C
  • IPP60R199CP
active and preferred
EVAL_2K5W_CCM_4P_V2 Diode (Si, SiC), Gate Driver, MOSFET, Power Controller (PWM, PFC) 2500W CCM Power factor correction (PFC), 110/230 AC to 400 DC, >98% peak efficiency, 65/100 kHz, shows efficiency benefits due to usage of TO247-4
  • 1EDI60N12AF
  • ICE3PCS01G
  • ICE3RBR4765JZ
  • IDH16G65C5
  • IFX91041
  • IPZ60R040C7
coming soon
EVAL_800W_130PFC_C7 Diode (Si, SiC), Gate Driver, MOSFET, Power Controller (PWM, PFC) 800W CCM Power factor correction (PFC), 110/230 AC to 400 DC, 97.8% peak efficiency, 130 kHz-high power density
  • 2EDN7524F
  • ICE2QR4780Z
  • ICE3PCS01G
  • IDH06G65C5
  • IPP60R180C7
  • XMC1302-T038X200 AB
on request
EVAL_800W_PFC_C7_V2 Diode (Si, SiC), Gate Driver, Power Controller (PWM, PFC), MOSFET 800W CCM Power factor correction (PFC), 110/230 AC to 400 DC, 97.8% peak efficiency, 130 kHz-high power density
  • 2EDN7524F
  • ICE2QR4780Z
  • ICE3PCS01G
  • IDH06G65C5
  • IPP60R180C7
  • XMC1402-Q040X0128 AA
active and preferred
EVAL_3KW_DB_PFC_C7 Diode (Si, SiC), Gate Driver, Microcontroller, MOSFET Full IFX solution for a Bridgeless Dual Boost PFC for a 3kW Server/Telecom/Industrial SMPS
  • IPW65R045C7
  • 1EDI60N12AF
  • 2EDN7524F
  • ICE2QR2280
  • IDH16G65C5
  • IPZ65R045C7
  • TLF4949
  • XMC1300
coming soon
EVAL_800W_PSU_4P_C7 MOSFET, Gate Driver This 800W evaluation board is intended to be a form, fit and function testplatform for server applications to show operation of the 600V CoolMOS C7, 650V SiC Diode , Optimos 40V, Quasi Resonat Flyback (QR) and XMC 1400/4200 controller.The evaluation board is designed around the Infineon 600V CoolMOS 4-Pin device and the cost effective Optimos 40V Technology to show switching performance and power density design .
    active and preferred
    EVAL_800W_PFC_P7 Gate Driver, Microcontroller, MOSFET, Power Controller (PWM, PFC) The purpose of this demoboard is to demonstrate the performance of the latest 600V CoolMOS™ P7 (IPP60R180P7) Power MOSFET technology working at 65kHz in a CCM PFC boost converter along with EiceDRIVER™ ICs (2EDN7524F) and 650V CoolSiC™ Schottky Diode Generation 5 (IDH06G65C5) using analog control (ICE3PCS01G).
    • 2EDN7524F
    • ICE2QR2280Z
    • ICE3PCS01G
    • IDH06G65C5
    • IPP60R180P7
    active and preferred
    KIT_2K5W_CCM_TOLL MOSFET, Diode (Si, SiC), Gate Driver This TO-lead less (TOLL) adapter is special made in order to upgrade the EVAL_2.5KW_CCM_4PIN evaluation board for SMD devices in the PFC stage by just exchanging the heatsink with the already assembled devices on it. The C7 GOLD series (G7) for the first time brings together the benefits of the improved C7 GOLD 600V CoolMOS™ technology, 4 pin Kelvin Source capability and the improved thermal properties of the TOLL package to enable a possible SMD solution for high current applications.
    • CoolMOSTM -IPT60R028G7
    • CoolSICTM G5 - IDK12G65C5
    active and preferred
    EVAL 300W CCM PFC P6 Diode (Si, SiC), MOSFET, Power Controller (PWM, PFC) 300W CCM Power factor correction (PFC), 110/230 AC to 400 DC, 98.5% peak efficiency
    • ICE3PCS01G
    • IDH02G65C5
    • IPP60R190P6
    active
    EVALPFC3-ICE3PCS03G Diode (Si, SiC), MOSFET, Power Controller (PWM, PFC) PFC CCM ICE3PCS03G for 300 W 400 V SMPS evaluation board with 85~265V AC universal input.
    • ICE3PCS02G
    • IDH04S60C
    • IPP60R199CP
    active and preferred

    PCB Design Data

    Title Size Date Version
    752 KB 05 11 2013 02_00
    470 KB 05 11 2013 02_00
    98 KB 05 11 2013 02_00
    624 KB 05 11 2013 02_00
     CoolSiC™ - Revolution to rely on  

    CoolSiC™ - Revolution to rely on

    Infineon CoolSiC™ semiconductor solutions are the next step towards an energy-smart world. Combining revolutionary SiC technology with extensive system understanding, best-in-class packaging and manufacturing excellence, Infineon CoolSiC enables you to develop radical new product designs with best system cost-performance ratio.

     
    Length 2:25
    650V SiC thinQ™ Generation 5 Diodes - Advantages of Silicon Carbide and Market Positioning

    CoolSiC™ schottky diodes 650V G5 - Advantages of Silicon Carbide and Market Positioning

     Introduction to the latest generation of Infineon's Silicon Carbide schottky diodes covering product positioning, application benefits and planned portfolio.

     
    Length 5:56
    650V SiC thinQ™ Generation 5 Diodes - Thin-Wafer, Efficiency and Portfolio

    CoolSiC™ schottky diodes 650V G5 - Thin-Wafer, Efficiency and Portfolio

     Introduction to the latest generation of Infineon's Silicon Carbide schottky diodes covering product positioning, application benefits and planned portfolio.

     
    Length 3:39
    1200V SiC thinQ!™ Generation 5 Schottky Diodes

    CoolSiC™ schottky diodes 1200V G5

    Infineon’s CoolSiC™ schottky diodes 650V G5 portfolio offers designers of high power 3-phase applications new levels of efficiency and reliability.

     
    Length 4:43
    1200V SiC thinQ!™ Generation 5 Schottky Diode - Product Portfolio and Target Application

    CoolSiC™ schottky diodes 1200V G5 - Product Portfolio and Target Application

    Comparison of the forward voltage of Infineon's CoolSiC™ schottky diodes G5 and G2. Datasheet and measurement forward voltage values are used to plot how much G5 has improved compared to previous generations.

     
    Length 4:43

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