SiC MOSFET用ゲートドライバIC

CoolSiC™ MOSFETに完全に適合するゲートドライバIC

概要

CoolSiC™ MOSFETなどの650 Vおよび1200 Vの超高速スイッチングパワートランジスタは、通常、ガルバニック絶縁を内蔵したゲートドライバICによって駆動するのが最適です。 これらのゲートドライバには、広い出力側電源範囲、拡張CMTI機能、アクティブミラークランプ、入力から出力へのガルバニック絶縁など、SiC MOSFETの駆動に通常推奨される最も重要な主要機能とパラメータが組み込まれています。

主な特長

  • 厳密な伝搬遅延マッチング
  • 正確な入力フィルター
  • 広い出力側電源範囲
  • 負のゲート電圧能力
  • 拡張された CMTI 機能
  • アクティブ ミラー クランプ
  • DESAT保護
  • UVLO
  • 入力から出力へのガルバニック絶縁
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Products

About

2300 V functional isolation

EiceDRIVER™ isolated gate drivers are based on magnetically-coupled coreless transformer (CT) technology, which provide signal transfer across the galvanic isolation. Thanks to the CT technology, we offer function, basic, and reinforce isolation, with UL 1577 (VISO = 5.7 kV) and IEC 60747-17 (VIORM = 1767 V) certification. The functional isolation reaches up to 2300 V, which is suitable for the CoolSiC™ 2 kV  in 1500 V DC application. All products certified according to IEC 60747-17 tested for 20 years lifetime with safety factor.

Prevent parasitic turn-on

EiceDRIVER™ SiC MOSFET gate driver ICs offers 40 V maximum output supply voltage to enable bipolar power supply with negative gate voltage for SiC MOSFET. It also offers active Miller clamp and Clamp driver is a feature with extra protection. The Clamp driver feature is available in 1ED3491MC12M and 1ED3890MC12M, which is highly-recommended for high power application. 

2300 V functional isolation

EiceDRIVER™ isolated gate drivers are based on magnetically-coupled coreless transformer (CT) technology, which provide signal transfer across the galvanic isolation. Thanks to the CT technology, we offer function, basic, and reinforce isolation, with UL 1577 (VISO = 5.7 kV) and IEC 60747-17 (VIORM = 1767 V) certification. The functional isolation reaches up to 2300 V, which is suitable for the CoolSiC™ 2 kV  in 1500 V DC application. All products certified according to IEC 60747-17 tested for 20 years lifetime with safety factor.

Prevent parasitic turn-on

EiceDRIVER™ SiC MOSFET gate driver ICs offers 40 V maximum output supply voltage to enable bipolar power supply with negative gate voltage for SiC MOSFET. It also offers active Miller clamp and Clamp driver is a feature with extra protection. The Clamp driver feature is available in 1ED3491MC12M and 1ED3890MC12M, which is highly-recommended for high power application. 

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