IRFIZ34N

55V Single N-Channel Power MOSFET in a TO-220 FullPak package
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IRFIZ34N
IRFIZ34N
データシート

Product details

  • ID (@25°C) max
    21 A
  • Ptot max
    31 W
  • Qgd
    9.3 nC
  • QG (typ @10V)
    22.7 nC
  • RDS (on) (@10V) max
    40 mΩ
  • RthJC max
    4.1 K/W
  • Tj max
    175 °C
  • VDS max
    55 V
  • VGS(th)
    3 V
  • VGS max
    20 V
  • パッケージ
    TO-220 FullPAK
  • 予算価格€/ 1k
    0.43
  • 動作温度
    -55 °C to 175 °C
  • 実装
    THT
  • 極性
    N
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

機能

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Isolated package

利点

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • High performance in low frequency applications
  • No need for insulating hardware

用途

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