IMDQ75R008M1H

IMDQ75R008M1H

The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability.
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IMDQ75R008M1H
IMDQ75R008M1H
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製品仕様情報

  • ID (@25°C) (最大)
    173 A
  • RDS (on) (@ Tj = 25°C)
    7.8 mΩ
  • VDS (最大)
    750 V
  • パッケージ
    Q-DPAK
  • 動作温度 範囲
    -55 °C～175 °C
  • 技術
    CoolSiC™ G1
  • 極性
    N
  • 認定
    Industrial
OPN
製品ステータス
インフィニオン パッケージ
パッケージ名
梱包サイズ
梱包形態
MSL (湿度感受性レベル)
防湿梱包
鉛フリー
ハロゲンフリー
RoHS対応
Infineon stock last updated:
The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.

特長

  • Highly robust 750 V technology
  • Best-in-class RDS(on) x Qfr
  • Excellent Ron x Qoss and Ron x QG
  • Low Crss/Ciss together and high Vgsth
  • 100% avalanche tested 
  • Infineon die attach technology 
  • Cutting-edge top-side-cooled package 

利点

  • Superior efficiency in hard switching
  • Enables higher switching frequency
  • Higher reliability
  • Withstand bus voltages beyond 500 V
  • Robustness against parasitic turn
  • Unipolar driving
  • Best-in-class thermal dissipation
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