AIDW10S65C5

データシート

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AIDW10S65C5
AIDW10S65C5
データシート

Product details

  • I(FSM) max
    58 A
  • IF max
    10 A
  • IR
    1.7 µA
  • Ptot max
    65.2 W
  • QC
    15 nC
  • RthJC
    1.78 K/W
  • VF
    1.5 V
  • パッケージ
    TO-247
  • 認定
    Automotive
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
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The 5th Generation CoolSiC™ Automotive Schottky Diode embodies Infineon's advanced Silicon Carbide Schottky Barrier diode technology. Its compact design and thin wafer-based technology offer improved efficiency across all load conditions, with superior thermal characteristics and low figure of merit (Qc x Vf). Complementing Infineon’s IGBT and CoolMOS™ portfolio, it meets demanding application requirements in the 650V voltage class.

機能

  • Revolutionary semiconductor material - Silicon Carbide
  • Benchmark switching behavior
  • No reverse recovery/ No forward recovery
  • Temperature independent switching behavior
  • High surge current capability
  • Pb-free lead plating; RoHS compliant
  • Junction Temperature range from  -40°C to 175°C
  • System efficiency improvement over Si diodes
  • System cost / size savings due to reduced cooling requirements
  • Enabling higher frequency / increased power density solutions
  • Higher system reliability due to lower operating temperatures
  • Reduced EMI

用途

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