Infineon GaN Insights 2026: Technology innovations providing the pathway to surging GaN growth in power semiconductors

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2026/02/10
  • Gallium nitride (GaN) market to reach $3 billion by 2030, growing at 44% CAGR
  • Infineon's high-voltage GaN bidirectional switches feature a revolutionary common drain design with a double gate structure 
  • GaN power semiconductors enter new markets, including AI, robotics, and quantum computing

Munich, Germany – 10 February 2026 – The power electronics industry is undergoing a significant transformation, driven by the growing adoption of Gallium Nitride (GaN) power solutions. Infineon Technologies (FSE: IFX / OTCQX: IFNNY), a global leader in power semiconductors and IoT, has published the 2026 edition of its annual GaN Insights, providing valuable awareness into the world of GaN technology, its applications, and future prospects. 
 
“GaN has become a market reality that has gained traction across various industries,” said Johannes Schoiswohl, Head of GaN Systems Business Line at Infineon. “At Infineon, we are committed to delivering value to our customers quickly and efficiently. Our product-to-system approach, combined with our leading manufacturing expertise and a broad GaN portfolio, enables us to provide our customers with the solutions they need to succeed in the market. We strive to maintain Infineon’s position as a trusted partner that can help our customers navigate the complexities of GaN technology and unlock its full potential.” 
 
According to analysts, the GaN power semiconductor market is expected to reach almost $3 billion by 2030, marking a 400% increase compared to the 2025 market [1]. This rapid growth is driven by significant production ramps, which began in 2025, broadening GaN adoption across multiple industries and enabling its penetration into new applications. In fact, the market is expected to grow at a compound annual growth rate (CAGR) of 44% from 2025 to 2030 [2], with revenue projections of $920 million in 2026, representing a 58% growth over 2025 [3].
 
Advancements in GaN product innovation
In 2026, designers are expected to uncover new uses of GaN bidirectional switches (BDS) beyond solar inverters and EV on-board chargers. Infineon's high-voltage bidirectional GaN switches feature a revolutionary common drain design with a double gate structure, leveraging proven Gate Injection Transistor (GIT) technology. This unique architecture enables the use of the same drift region to block voltages in both directions, resulting in a significantly reduced die size compared to conventional back-to-back arrangements. For instance, utilizing Infineon’s CoolGaN™ BDS, which operates up to 1 MHz, solar microinverters deliver 40% more power in the same-sized inverter while reducing system costs. 
 
GaN technology is expanding into new applications
GaN is expanding into various industries, including AI data centers, robotics, electric vehicles, renewable energy, and emerging fields such as digital health and quantum computing. In the data center market, GaN-based power supplies with new topologies are achieving higher than ever efficiencies and power densities, reducing power losses by up to 30% and enabling the deployment of more efficient and compact data center architectures. GaN-based motor drives used in humanoid robots can be 40% smaller in size and increase fine movement control. 
 
Why Infineon and Infineon GaN?
Infineon stands out as a global leader in power semiconductors, renowned for its innovative solutions in silicon (Si), silicon carbide (SiC), and GaN. The company's Integrated Device Manufacturing (IDM) strategy and industry-leading system understanding provide cutting-edge technologies that cater to the evolving needs of industries. Empowered by 300-millimeter GaN wafer manufacturing, Infineon's GaN products demonstrate exceptional performance leading to application advantages. For instance:

  • The new CoolGaN Transistor 650 V G5 generation of products have figures-of-merit, a product of conduction loss and switching loss, 30-40% better than others in the industry substantially increasing system performance and design degrees of freedom.
  • Infineon’s innovative CoolGaN Transistor MV G5 products have monolithically integrated a Schottky diode resulting in 15% lower losses and >10% lower device temperature translating to reduced size and cost with higher efficiency and reliability. 
  • Bolstering its position as the world’s leader in automotive semiconductors, Infineon’s new CoolGaN Automotive 100 V product meets the rigorous requirements of the AEC-Q101 standard to address the application shift from 12 V to 48 V systems in the newest generations of automobile architectural designs.

With a broad portfolio of over 50 GaN products, offering both discrete and highly integrated solutions, spanning voltages from 40 V to 700 V targeted for consumer, industrial, and automotive applications, Infineon provides an extensive set of solutions covering a wide range of power applications.
 
GaN technology is on the rise to further tap into the power electronics industry in 2026, driven by its superior performance, efficiency, and reliability. As a market leader in GaN technology, Infineon is committed to empowering its customers and partners to navigate this new frontier and shape the energy-efficient technologies of tomorrow.
 
Availability
The GaN Insights eBook, available on Infineon's website, explores the current state of GaN technology, products, their applications, and the opportunities and challenges that lie ahead. Download here.

[1] Yole Group: Power GaN 2025 Report. https://www.yolegroup.com/product/report/power-gan-2025/ 
[2] TrendForce: 2025 Global GaN Power Device Market Analysis. https://www.trendforce.com/research/download/RP250731KZ 
[3] Yole Group: Power GaN 2025 Report.  https://www.yolegroup.com/product/report/power-gan-2025/

About Infineon

Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The Company had around 57,000 employees worldwide (end of September 2025) and generated revenue of about €14.7 billion in the 2025 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).

 

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Empowered by 300-millimeter GaN wafer manufacturing, Infineon's GaN products demonstrate exceptional performance leading to application advantages.

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Michael Burner

Spokesperson Consumer, Compute and Communication, PSS Division

+49 89 234 39300

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