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1200 V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules

In this paper the 1200V IGBT4, is presented for the first time. The IGBT4 comes as a product family with optimized vertical structures for low, medium and high power applications respectively, balanced for the typical switching frequencies of the different power classes. In the following the focus is on the chip optimized for high current modules. The most important design targets for this power class are explained. Finally, the realization is discussed by means of measured data. IGBT4, Infineon´s 1200V IGBT generation. As a main feature/advantage it allows a maximum junction temperature of 175°C. A maximum junction temperature of 175°C was introduced for the first time by Infineon at 600V power semiconductors of the third generation. As main advantage one should name here the potential of higher output power (up to 20%, by use of the full temperature swing based on the same cooling condition). The higher temperature swing is supported by an improved power cycling reliability. For operation temperatures up to 150°C the target is to maintain the Power cycling capability of former Modules at 125°C.

• 140.97 KB
• 2014/02/07