IDK05G65C5

IDK05G65C5

600 V Silicion Carbide Schottky diode in real2pin package
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IDK05G65C5
IDK05G65C5
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製品仕様情報

  • I(FSM) (最大)
    46 A
  • IF (最大)
    5 A
  • IR
    0.25 µA
  • Ptot (最大)
    55 W
  • QC
    8 nC
  • RthJC
    1.7 K/W
  • VF
    1.5 V
  • パッケージ
    D2PAK
  • 認定
    Industrial
OPN
製品ステータス
インフィニオン パッケージ
パッケージ名
梱包サイズ
梱包形態
MSL (湿度感受性レベル)
防湿梱包
鉛フリー
ハロゲンフリー
RoHS対応
Infineon stock last updated:
Infineon's CoolSiC™ 650V Schottky Diodes deliver high price-performance ratio, leveraging advanced silicon carbide production facilities, a solid track record, utmost quality, and a very granular product portfolio. The latest product family of CoolSiC™ Schottky diodes G6, comes with improved system efficiency through reduced forward voltage, complementing Infineon’s 600 V and 650 V CoolMOS™ 7 superjunction MOSFET families.

特長

  • Improved figure of merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating

利点

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

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