ISZ0901NLS

OptiMOS™ low-voltage power MOSFETs - perfectly addressing the needs of charger and adapter designs

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ISZ0901NLS
ISZ0901NLS

製品仕様情報

  • Ciss
    670 pF
  • Coss max
    290 pF
  • ID max
    40 A
  • IDpuls max
    160 A
  • Ptot max
    26 W
  • QG (typ @4.5V)
    4.4 nC
  • QG (typ @10V)
    9.1 nC
  • RDS (on) (@10V) max
    6 mΩ
  • RDS (on) (@4.5V LL) max
    8.1 mΩ
  • RDS (on) (@4.5V) max
    8.1 mΩ
  • RthJA max
    60 K/W
  • RthJC max
    4.9 K/W
  • Rth
    4.9 K/W
  • VDS max
    25 V
  • VGS(th)
    1.2 V to 2 V
  • パッケージ
    PQFN 3.3 x 3.3 Fused Lead
  • 動作温度
    -55 °C to 150 °C
  • 実装
    SMD
  • 極性
    N
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS™ PD features quality products in compact, lightweight packages.Click here to view full portfolio .

機能

  • Logic level 
  • Low on-state resistance RDS(on)
  • Low gate, output and reverse recovery charge
  • Excellent thermal behavior

利点

  • Quick quote response
  • Highest efficiency and power density designs
  • Compact, lightweight and environmentally friendly products
  • Excellent price-performance ratio

用途

ドキュメント

デザイン リソース

開発者コミュニティ

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