GS-065-150-1-D2

650 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability
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GS-065-150-1-D2
GS-065-150-1-D2

Product details

  • ID (@25°C) max
    150 A
  • QG
    33 nC
  • RDS (on) (typ)
    10 mΩ
  • VDS max
    600 V
OPN
製品ステータス
インフィニオンパッケージ
パッケージ名
包装サイズ
包装形態
水分レベル
モイスチャーパッキン
鉛フリー
ハロゲンフリー
RoHS準拠
Infineon stock last updated:
The GS-065-150-1-D2 is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current and high switching frequency. The GS-065-150-1-D2 is a high performing GaN die designed for use in power modules for high power applications such as on-board and off-board EV chargers, traction drive, industrial power supplies and renewable energy systems. Please contact us for more information here.

機能

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Zero reverse recovery loss
  • Fast, controllable fall and rise times
  • RoHS 3(6+4) compliant

利点

  • Improves system efficiency
  • Improves power density
  • Reduces system weight
  • Enables higher operating frequency
  • System cost reduction savings

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