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IQE022N06LM5SC

OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down DSC package
EA.
在庫あり

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IQE022N06LM5SC
IQE022N06LM5SC
EA.

Product details

  • ID (@25°C) max
    151 A
  • IDpuls max
    604 A
  • Ptot max
    100 W
  • QG (typ @4.5V)
    26 nC
  • QG (typ @10V)
    53 nC
  • RDS (on) (@4.5V) max
    2.9 mΩ
  • RDS (on) (@10V) max
    2.2 mΩ
  • VDS max
    60 V
  • VGS(th)
    1.7 V
  • Package
    PQFN 3.3x3.3 Source-Down
  • Budgetary Price €/1k
    1.11
  • Operating Temperature
    -55 °C to 175 °C
  • Polarity
    N
  • Special Features
    Dual-Side Cooling
OPN
IQE022N06LM5SCATMA1
製品ステータス active and preferred
インフィニオンパッケージ
パッケージ名 PQFN 3.3x3.3 Source-Down DSC
包装サイズ 6000
包装形態 TAPE & REEL
水分レベル 1
モイスチャーパッキン NON DRY
鉛フリー No
ハロゲンフリー Yes
RoHS準拠 Yes
Infineon stock last updated:
EA. 在庫あり

製品ステータス
Active
インフィニオンパッケージ
パッケージ名 PQFN 3.3x3.3 Source-Down DSC
包装サイズ 6000
包装形態 TAPE & REEL
水分レベル 1
モイスチャーパッキン NON DRY
鉛フリー
ハロゲンフリー
RoHS対応
EA.
在庫あり
IQE022N06LM5SC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density and improved layout possibilities. Combined with the innovative dual-side cooling package, which can dissipate up to three times more power than the traditional overmolded package, IQE022N06LM5SC is targeted for high power density and performance SMPS products commonly found in telecom and data servers.

機能

  • Logic level allows lower Qrr
  • Reduced RDS(on) by up to 30%
  • Improved RthJCover PQFN
  • New, optimized layout possibilities

利点

  • Enabling highest power density
  • Superior thermal performance
  • Efficient layout for space use
  • Reduced PCB losses

用途

ドキュメント

デザイン リソース

開発者コミュニティ

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